SMD Type
Transistors
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1
Features
Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A)
High Speed Switching Time: tstg = 1.0us (typ.)
Small Flat Package
PC = 1 to 2W (mounted on ceramic substrate)
Complementary to 2SC2873
Electrical Characteristics Ta = 25
Absolute Maximum Ratings Ta = 25
PNP Transistors
2SA1213
1.Base
2.Collector
3.Emitter
1.70 0.1
0.42 0.1
0.46 0.1
Parameter Symbol Test Conditions Min Typ Max Unit
Collector- base breakdown voltage V
CBO
Ic= -100 μA， I
E
=0
-50
Collector- emitter breakdown voltage V
CEO
Ic= -10 mA， I
B
=0
-50
Emitter - base breakdown voltage V
EBO
I
E
= -100μA， I
C
=0
-5
Collector-base cut-off current I
CBO VCB= -50 V , IE=0 -100
Emitter cut-off current I
EBO
V
EB
= -5V , I
C
=0 -100
Collector-emitter saturation voltage V
CE(sat)
I
C
=-1 A, I
B
=- 50mA -0.5
Base - emitter saturation voltage V
BE(sat)
I
C
=-1 A, I
B
=- 50mA -1.2
h
FE(1)
V
CE
= -2V, I
C
= -0.5A 70 240
h
FE(2)
V
CE
= -2 V, I
C
= -2A 20
Turn-on time t
on
0.1
Storage time t
stg 1
Fall time t
f
0.1
Collector output capacitance C
ob
V
CB
= -10V, I
E
= 0 40 pF
Transition frequency f
T VCE= -2V, IC= -0.5A
,f=1MHz
120 MHz
V
V
us
nA
DC current gain
See Test Circuit.
Parameter Symbol Rating Unit
Collector - Base Voltage V
CBO
-50
Collector - Emitter Voltage V
CEO
-50
Emitter - Base Voltage V
EBO
-5
Collector Current - Continuous I
C
-2
Base Current - Continuous I
B
-0.4
Collector Power Dissipation P
C
500 mW
Junction Temperature T
J
150
Storage Temperature range T
stg
-55 to 150
V
℃
A
■
Classification of h
fe(1)
Type 2SA1213-O 2SA1213-Y
Range 70-140 120-240
Marking NO NY
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SMD Type
Transistors
Test Circuit
PNP Transistors
2SA1213
■
Typical Characterisitics
30 Ω
I
B2
−30 V
I
B1
20 μs
I
B1
I
B2
I
B1
= 0.05 A,I
B2
= 0.05 A
DUTY CYCLE ≤ 1%
OUTPUT
INPUT