© 2021 Sensitron Semiconductor Ph (631) 586 7600 Fx (631) 242 9798 www.sensitron.com sales@sensitron.com
SENSITRON
SEMICONDUCTOR
DATA SHEET 2044, REV. E
S-100 SCREENING PROCEDURE
All parts procured with S-100 Screening shall be 100% screened in accordance with one of the three following procedures,
as applicable. All testing is performed at room temperature. For testing at high and low temperatures, Group A testing is
required.
DISCRETE SEMICONDUCTORS
Reference: MIL-PRF-19500, JANTXV Level
TEST / PROCESS
MIL-STD-750 METHOD
CONDITIONS
1
Pre-cap Visual Inspection
2074 Diodes (Glass)
2069 Power FETs
2072 Transistors, non-glass Diodes
JANTXV level.
3a
Temperature Cycling
1051
Test condition C or maximum storage
temperature, whichever is less.
20 cycles, t (extremes) 10 minutes.
No dwell time required at 25
0
C.
3b
Surge
4066
Condition A or B, as specified. Only
applicable if specified.
3c
Thermal Impedance
3161 Power FETs
3103 IGBT
3131 Bipolar Transistor
3101 Diodes
Only applicable if specified.
9
Interim Electrical Parameters
-
Per device detail specification.
10
High Temperature Reverse
Bias - HTRB (Not required for
zeners and case mounted
rectifiers)
1039 Transistors
1042 Power FETs
1038 Diodes and Rectifiers
Condition A 80% (minimum of rated VCB
(bipolar), VGS (FET) or VDS (FET).
Condition B 80% (minimum) of rated VGS.
Condition A 80% (minimum) of rated VR or
VRWM; 100% of VRWM if half sine
condition is specified.
11
Interim Electrical Parameters
-
As specified, but including all delta
parameters, as a minimum. Leakage current
shall be measured prior to any other
parameter, within 24 hours after removal of
applied voltage in HTRB.
12
Burn-in
1039 Bipolar Transistors
1042 Power FETs
1038 Diodes, Rectifiers and Zeners
1038 Case mount Rectifiers
1040 Thyristors
Condition B 160 hours minimum.
Condition A 160 hours minimum.
Condition B 96 hours minimum.
Condition A 48 hours minimum (performed
at 125 C for Schottky Devices rated at 45V
and above; performed at 100 C for Schottky
Devices rated at 30V and below).
96 hours minimum (full wave blocking test).
13
Final Electrical
-
Group A, Subgroup 2, and delta parameters.
Glass Rectifiers and Switching Diodes need
Scope Display
14
Hermetic Seal
a. Fine
b. Gross
1071
Fine leak not required for Double Plug
Diodes
17
Case Isolation
To be performed on case isolated
packages.
As specified.
Notes: 1) Sequence and testing varies per device.
2) For diode bridges pre-cap visual is performed at the bridge assembly level prior to potting.
3) Flow in accordance with slash sheet may be used if applicable.
S-100 SCREENING PROCEDURE
© 2021 Sensitron Semiconductor Ph (631) 586 7600 Fx (631) 242 9798 www.sensitron.com sales@sensitron.com
SENSITRON
SEMICONDUCTOR
DATA SHEET 2044, REV. E
HYBRIDS
Reference: MIL-PRF-38534, Class H
SCREEN
CONDITIONS
1
Internal Visual
Condition B
2
Temperature Cycling
Condition C
3
Constant Acceleration
Condition A (min) Y1 orientation only.
4
Pre burn in Electrical Parameters
Per device detailed specification.
5
Burn-in
160 hours at 125 C minimum.
6
Final Electrical Parameters
Per device detailed specification.
7
PDA Calculation
10%
8
Seal:
a. Fine
b. Gross
-
9
External Visual, Mechanical
-
MICROCIRCUITS
Reference: MIL-PRF-38535, Class B; and MIL-STD-883, Test Method 5004 Class B
SCREEN
MIL-STD-883 METHOD
CONDITIONS
1
Internal Visual
2010
Condition B
2
Temperature Cycling
1010
Condition C
3
Constant Acceleration
2001
Condition E (min) Y1 orientation only.
3.1
Visual Inspection
4
Pre burn in Electrical Parameters
-
Per device detailed specification.
5
Burn-in
1015
96 hours at 125 C minimum.
Post burn in electrical Parameters
Per device detailed specification
6
PDA Calculation
5% max
7
Final Electrical Parameters
-
Per device detailed specification.
8
Seal:
a. Fine
b. Gross
1014
-
9
External Visual, Mechanical
2009
-
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the
datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical
equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-
safe precautions or other arrangement .
3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the
user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other
problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a
value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed writ ten permission of Sensitron
Semiconductor.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
S-100 SCREENING PROCEDURE