V
RM
= 200 V, I
F(AV)
= 0.8 A, t
rr
= 400 ns
Fast Recovery Diode
AU02Z Data Sheet
AU02Z-DSE Rev.1.3 SANKEN ELECTRIC CO., LTD. 1
Mar. 08, 2022 https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2018
Description
The AU02Z is a fast recovery diode of 200 V / 0.8 A.
The maximum t
rr
of 400 ns is realized by optimizing a
life-time control.
Features
V
RM
---------------------------------------------------- 200 V
I
F(AV)
---------------------------------------------------- 0.8 A
V
F
------------------------------------------------------ 1.3 V
t
rr1
-------------------------------- ---------------------- 400 ns
Bare Leads: Pb-free (RoHS Compliant)
Flammability: Equivalent to UL94V-0
Applications
Secondary-side Rectifier Diode
(Flyback Converter, LLC Converter, etc.)
Freewheel Diode
(Offline Buck Converter, Offline Buck-boost
Converter, etc.)
Package
Axial (φ2.4 × 2.9L / φ0.57)
(1)
(2)
(1) Cathode
(2) Anode
Not to scale
Cathode Mark
(1)
(2)
AU02Z
AU02Z-DSE Rev.1.3 SANKEN ELECTRIC CO., LTD. 2
Mar. 08, 2022 https://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2018
Absolute Maximum Ratings
Unless otherwise specified, T
A
= 25 °C.
Parameter
Symbol
Conditions
Rating
Nonrepetitive Peak Reverse Voltage
V
RSM
250
Repetitive Peak Reverse Voltage
V
RM
200
Average Forward Current
I
F(AV)
See Figure 2 and Figure 3
0.8
Surge Forward Current
I
FSM
Half cycle sine wave,
positive side, 10 ms, 1 shot
25
I
2
t Limiting Value
I
2
t
1 ms t 10 ms
3.13
Junction Temperature
T
J
40 to 150
Storage Temperature
T
STG
40 to 150
Electrical Characteristics
Unless otherwise specified, T
A
= 25 °C.
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Forward Voltage Drop
V
F
T
J
= 25 °C, I
F
= 0.8 A
1.3
V
T
J
= 100 °C, I
F
= 0.8 A
0.8
V
Reverse Leakage Current
I
R
V
R
= V
RM
10
µA
Reverse Leakage Current
under High Temperature
HI
R
V
R
= V
RM
, T
J
= 100 °C
250
µA
Reverse Recovery Time
t
rr1
I
F
= I
RP
= 10 mA,
90% recovery point,
T
J
= 25 °C
400
ns
t
rr2
I
F
= 10 mA, I
RP
= 20 mA,
75% recovery point,
T
J
= 25 °C
180
ns
Thermal Resistance
(1)
R
th(J-L)
See Figure 1
22
°C/W
Mechanical Characteristics
Parameter
Conditions
Min.
Typ.
Max.
Unit
Package Weight
0.17
g
Device
Diameter of soldering area: φ3 mm
Cupper thickness: 50 µm
T
L
1.6 mm
5 mm
Figure 1. Lead Temperature Measurement Conditions
(
1
)
R
th (J-L)
is thermal resistance between junction and lead. Lead temperature (T
L
) is measured near the root of pin (see
Figure 1).