Rev. A, April 2022
Description
Features
Package
TO-247-4L
Typical applications
1200V-72mW SiC FET
w Low gate charge: Q
G
= 37.8nC
w ESD protected: HBM class 2 and CDM class C3
w TO-247-4L package for faster switching, clean gate waveforms
w Power factor correction modules
w Motor drives
w Switch mode power supplies
w Induction heating
The UF4C120070K4S is a 1200V, 72mW G4 SiC FET. It is based on a
unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET
is co-packaged with a Si MOSFET to produce a normally-off SiC FET
device. The device’s standard gate-drive characteristics allows for a
true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si
superjunction devices. Available in the TO-247-4L package, this
device exhibits ultra-low gate charge and exceptional reverse
recovery characteristics, making it ideal for switching inductive loads
and any application requiring standard gate drive.
w On-resistance R
DS(on)
: 72mW (typ)
w Operating temperature: 175°C (max)
w Excellent reverse recovery: Q
rr
= 119nC
w Low body diode V
FSD
: 1.43V
Part Number
w Low intrinsic capacitance
w Threshold voltage V
G(th)
: 4.8V (typ) allowing 0 to 15V drive
Marking
UF4C120070K4S
UF4C120070K4S
w PV inverters
w EV charging
DATASHEET
UF4C120070K4S
CASE
D (1)
S (2)
G (4)
KS (3)
3
CASE
1
2
4
Datasheet: UF4C120070K4S Rev. A, April 2022 1
Maximum Ratings
Symbol Value Units
V
DS
1200 V
-20 to +20 V
-25 to +25 V
27.5 A
20.7 A
I
DM
83 A
E
AS
36 mJ
dv/dt 200 V/ns
P
tot
217 W
T
J,max
175 °C
T
J
, T
STG
-55 to 175 °C
T
L
250 °C
1. Limited by T
J,max
2. Pulse width t
p
limited by T
J,max
3. Starting T
J
= 25°C
Thermal Characteristics
Min Typ Max
R
qJC
0.53 0.69 °C/W
DC
AC (f > 1Hz)
V
DS
≤ 800V
Max. lead temperature for soldering,
1/8” from case for 5 seconds
Power dissipation
Parameter
Test Conditions
Value
Thermal resistance, junction-to-case
Maximum junction temperature
Operating and storage temperature
T
C
= 25°C
Pulsed drain current
2
T
C
= 25°C
Single pulsed avalanche energy
3
L=15mH, I
AS
=2.2A
T
C
= 100°C
Continuous drain current
1
SiC FET dv/dt ruggedness
Parameter
Test Conditions
Drain-source voltage
Gate-source voltage
T
C
= 25°C
Datasheet: UF4C120070K4S Rev. A, April 2022 2