©2016 Littelfuse, Inc.
Specifications are subject to change without notice.
TVS Diode Arrays (SPA
®
Diodes)
Revision: 09/12/17
Ultra Low Capacitance Diode Arrays Series
Applications
• USB 3.1, 3.0, 2.0
• HDMI 2.0, 1.4a, 1.3
• DisplayPort
(TM)
• V-by-One
®)
• Thunderbolt (Light Peak)
• LVDS interfaces
• Consumer, mobile and
portable electronics
• Tablet PC and external
storage with high speed
interfaces
• Applications requiring
high ESD performance in
small packages
Pinout
Bottom View
1 2 3.G 4 5
10 9 8.G 7 6
12
3
1
23
4
5
6
G
1
2
3
4
G
Functional Block Diagram
2
3
1
2
G, 3, 8
1 54
2
G
1 43 65
Ultra Low Capacitance Diode Arrays Series
Description
This Ultra Low Capacitance Diode Arrays Series provides
signal integrity-preserving unidirectional ESD protection
for the world’s most challenging high speed serial
interfaces. The SOD 883 and the standard 2.4 mm x 1.0
mm packaging options provide significant PCB layout
space savings and reduces trace layout complexity. This
component provides both air and contact ESD protection
(IEC 61000-4-2) of 20 kV while maintaining an extremely
low leakage current and low dynamic resistance. Due to
its low off-state capacitance, this series is compatible with
high speed interfaces and thus maintains high bandwidth
signal integrity.
Features
ELVRoHS
Pb
GREEN
• 0.20 pF TYP capacitance
• ESD, IEC 61000-4-2,
±20kV contact, ±20kV air
• Low clamping voltage
of 9.2V @ I
PP
=2.0A
(t
P
=8/20μs)
• Low profile DFN array
packages
• Facilitates excellent signal
integrity
• ELV Compliant
• Halogen free, Lead free
and RoHS compliant
1004 DFN array 0402 DFN array
1004 DFN array
ACE-Q101 qualified)
0402 DFN array
©2016 Littelfuse, Inc.
Specifications are subject to change without notice.
TVS Diode Arrays (SPA
®
Diodes)
Revision: 09/12/17
Ultra Low Capacitance Diode Arrays Series
SP1013
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause
permanent damage to the component. This is a stress only rating and operation of the
componen at these or any other conditions above those indicated in the operational
sections of this specification is not implied.
Absolute Maximum Ratings
Electrical Characteristics - (T
OP
=25°C)
Parameter Test Conditions Min Typ Max Units
Input Capacitance @ V
R
= 0V, f = 3GHz 0.20 0.22 pF
Breakdown Voltage V
BR
@ I
T
=1mA 9.00 V
Reverse Working Voltage 7. 0 V
Reverse Leakage Current I
L
@ V
RWM
=5.0V 25 50 nA
Clamping Voltage V
CL
@ I
PP
=2.0A 9.20 V
Peak Pulse Current t
P
=8/20μs 2.0 A
ESD Withstand Voltage
IEC 61000-4-2 (Contact) ±20
kV
IEC 61000-4-2 (Air) ±20
Insertion Loss Diagram
1.E+06
1.E+07 1.E+08 1.E+10
Frequency (Hz)
1.E+09
-20.0
0
S21 Insertion Loss (dB)
-10.0
-5.0
-15.0
-25.0
-30.0
Symbol Parameter Value Units
I
PP
Peak Current (t
p
=8/20μs) 2.0 A
T
OP
Operating Temperature -30 to 85 °C
T
STOR
Storage Temperature -55 to 150 °C
Device IV Curve
-2 -1 01
2
34 56 78
Current (mA)
Voltage (V)
1.0
0.8
0.6
0.4
0.2
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
910