1N4001W THRU 1N4007W
Surface Mount General Purpose Silicon Rectifiers
Reverse Voltage - 50 to 1000 V
Forward Current - 1 A
Maximum Ratings and Electrical characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.
Parameter Symbols
1N4001W
1N4002W
1N4003W
1N4004W 1N4005W 1N4006W 1N4007W
Units
Maximum Repetitive Peak Reverse Voltage
V
RRM
50 100 200 400 600 800 1000 V
Maximum RMS voltage
V
RMS
35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
V
DC
50 100 200 400 600 800 1000 V
Maximum Average Forward Rectified Current
at T
a
= 65
O
C
I
F(AV)
1 A
Peak Forward Surge Current 8.3 ms Single Half
Sine Wave Superimposed on Rated Load
(JEDEC Method)
I
FSM
25 A
Maximum Instantaneous Forward Voltage at 1 A
V
F
1.1 V
Maximum DC Reverse Current T
a
= 25℃
at Rated DC Blocking Voltage
T
a
= 125
℃
I
R
5
50
µA
Typical Junction Capacitance
1)
C
j
4 pF
Typical Thermal Resistance
2)
R
θJA
180
℃/W
Operating and Storage Temperature Range
T
j
, T
stg
- 55 to + 150
℃
1)
Measured at 1 MHz and applied reverse voltage of 4 V D.C
2)
Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
IATF 0113686
SGS TH07/1033
TH09/2479
TH97/2478
www.e icsemi.com
Dimensions in millimeters
SOD-123FL
1.55(0.061)
1.95(0.077)
0.6(0.024)
1.0(0.039)
2.5(0.098)
2.9(0.114)
0.8(0.031)
1.2(0.047)
0.05(0.002)
0.25(0.010)
3.5(0.138)
3.9(0.154)
0.5(0.020)
1.1(0.043)
max0.1(0.004)
Page 1 of 3 Rev. 03 : June 12, 2009
T
J
=25℃
T
J
=100℃
T
J
=150℃
T
J
=150℃
T
J
=125℃
T
J
=100℃
T
J
=75℃
T
J
=50℃
T
J
=25℃
IATF 0113686
SGS TH07/1033
TH09/2479
TH97/2478
www.e icsemi.com
Page 2 of 3 Rev. 03 : June 12, 2009