Features Product Summary
Value Unit
30 V
1.7 V
145 A
1.2
m
2.0
m
Applications
Package # of Pins Marking MSL
T
J
(°C)
Media Quantity (pcs)
PDFN3x3-8L 8 L0302A 1 -55 to 150 13-inch Reel 3000
Symbol Unit
V
DS
V
V
GS
V
I
DM
A
I
AS
A
E
AS
mJ
T
J
, T
STG
°C
Pulsed Drain Current
(2)
450
Continuous Drain
Current
(1)
T
C
= 25°C
I
D
Continuous Drain
Current
(6)
145
T
C
= 100°C
91
I
D
80
T
C
= 25°C
W
T
C
= 100°C
20
Avalanche Current
(3)
45
Avalanche Energy
(3)
101
Junction & Storage Temperature Range -55 to 150
Power Dissipation
(4)
T
C
= 25°C
P
D
50
A
A
Drain-to-Source Voltage 30
Gate-to-Source Voltage ±20
I
D
(@ V
GS
= 10V)
(1)
R
DS(ON)_Typ
(@ V
GS
= 10V)
Ordering Information
Device
R
DS(ON)_Typ
(@ V
GS
= 4.5V)
JMSL0302AU
30V 1.2m N-Ch Power MOSFET
Parameter
V
DS
V
GS(th)_Typ
JMSL0302AU-13
Value
Absolute Maximum Ratings
(@ T
A
= 25°C unless otherwise specified)
Parameter
• Ultra-low R
DS(ON)
• High Current Capability
• ESDEnhancedtoHBMRatingupto1.0kV
• 100% UIS Tested, 100% R
g
Tested
0
1
2
3
4
5
246810
R
DS(ON)
(m)
V
GS
(V)
0
2
4
6
8
10
0 10203040
V
GS
(V)
Q
g
(nC)
R
DS
(
ON
)
vs. V
GS
Gate Charge
V
DS
= 15V
I
D
= 20A
• Power Management in Computing, CE, IE 4.0, Communications
• Current Switching in DC/DC & AC/DC Sub-systems
• Motor Driving, Quick/Wireless Charging
I
D
= 20A
Pin Configuration
Top View
G
D
S
1
2
3
4
8
7
6
5
Top View
Bottom View
PDFN3x3-8L
Rev. 3.0
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Page 1 of 5
Symbol Min. Typ. Max. Unit
V
(BR)DSS
30 V
V
DS
= 30V, V
GS
= 0V
1.0
T
J
=
55°C
5.0
I
GSS
±100 nA
Gate Threshold Voltage
V
GS(th)
1.2 1.7 2.5 V
1.2 1.5
m
2.0 2.9
m
g
FS
100 S
V
SD
0.68 1.0 V
I
S
50 A
C
iss
2975 pF
C
oss
2650 pF
C
rss
117 pF
R
g
1.4
Q
g
39 nC
Q
g
19.0 nC
Q
gs
8.6 nC
Q
gd
5.0 nC
t
D(on)
6.0 ns
t
r
9.0 ns
t
D(off)
26 ns
t
f
10.0 ns
t
rr
51 ns
Q
rr
57 nC
Symbol Unit
R
JA
°C/W
R
JC
°C/W
Notes:
2.0
I
F
= 20A, dI
F
/dt = 100A
/
s
Parameter
SWITCHING PARAMETERS
(5)
6. Continuous current rating is limited by the package used.
2. This single-pulse measurement was taken under T
J_Max
= 150°C.
3. This single-pulse measurement was taken under the following condition [L = 100H, V
GS
= 10V, V
DS
= 30V] while its value is limited by
4. The power dissipation P
D
is based on T
J_Max
= 150°C.
5. This value is guaranteed by design hence it is not included in the production test.
T
J_Max
= 150°C.
1. Computed continuous current assumes the condition of T
J_Max
while the actual continuous current depends on the thermal & electro-mechanical
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Typ.
Thermal Performance
Max.
application board design.
Gate Resistance
V
GS
= 0V, V
DS
= 0V, f = 1MHz
Total Gate Charge (@ V
GS
= 10V)
V
GS
= 0 to 10V
V
DS
= 15V, I
D
= 20A
Total Gate Charge (@ V
GS
= 4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
V
GS
= 10V, V
DS
= 15V
R
L
= 0.75
,
R
GEN
= 3
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
65
2.5
50
Output Capacitance
Reverse Transfer Capacitance
DYNAMIC PARAMETERS
(5)
JMSL0302AU
Parameter Conditions
Drain-Source Breakdown Voltage
I
D
= 1mA, V
GS
= 0V
STATIC PARAMETERS
Electrical Characteristics
(@ T
J
= 25°C unless otherwise specified)
Static Drain-Source ON-Resistance
T
C
= 25°C
Input Capacitance
V
GS
= 4.5V, I
D
= 15A
R
DS(ON)
V
GS
= 0V, V
DS
= 15V, f = 1MHz
A
Gate-Body Leakage Current
V
DS
= 0V, V
GS
= ±20V
Body Diode Reverse Recovery Time
I
F
= 20A, dI
F
/dt = 100A
/
s
Body Diode Reverse Recovery Charge
Zero Gate Voltage Drain Current
I
DSS
V
DS
= V
GS
, I
D
= 250A
Diode Continuous Current
V
GS
= 10V, I
D
= 20A
Forward Transconductance
V
DS
= 5V, I
D
= 20A
Diode Forward Voltage
I
S
= 1A, V
GS
= 0V
Rev. 3.0
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Page 2 of 5