PT2302B
VDS= 20V
RDS(ON), Vgs@ 4.5V, Ids@
Ω
RDS(ON), Vgs@ 2.5V, Ids@ 1.0A
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Ω
80m
Parameter Symbol Limit
Unit
Drain-Source Voltage
V
DS
20
Gate-Source Voltage
V
GS
±12
V
Continuous Drain Current
I
D
2.3
Pulsed Drain Current
1)
I
DM
6
A
Maximum Power Dissipation
P
D
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
o
C
0.6
2)
Notes
Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board, t v 5 sec.
1)
2)
50m
2.0A
1 -
2014-11
-
20V N-Channel Enhancement Mode MOSFET
5030
0080
Millimeter
Millimet
er
REF.
Min.
Max.
REF.
Min. Max.
A 2. 3. G
B 2. 2. H 0.90 1.1
C 1.20 1.40 K 0.10 0.20
D 0.30 0.50 J 0.35
E 0 0.10 L 0.92
F 0.45 0.55 M 0° 10°
SOT-23
1.80
2.00
0.70
0.98
D
G
S
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Zero Gate Voltage Drain Current
ELECTRICAL CHARACTERISTICS
Parameter Test Condition
Static
Drain-So urce Breakdown Voltage BV
DSS
V
GS
= 0V, I
D
= 250uA 20 V
Drain-So urce On-State Res istance
V
GS
= 4.5V, I
D
= 2A
R
DS(on)
V
GS
= 2.5V, I
D
= 1A
mΩ
Gate Threshol d Voltage V
GS(th)
V
DS
=V
GS
, I
D
= 250uA 0.6 V
V
DS
= 19.5V, V
GS
= 0V
1
Gate Body Leakage I
GSS
V
GS
=12V, V
DS
= 0V
100 nA
Forward Transconductan ce g
fs
V
DS
= 5V, I
D
= 2.3A 10 S
Dynamic
Total Gate Charge Q
g
5.4
Gate-Source Charge Q
gs
0.65
Gate-Drain Charge Q
gd
V
DS
= 10V, I
D
= 2.3A
V
GS
= 4.5V
1.6
nC
Turn-On Delay Time t
d(on)
12
Turn-On Rise Time
t
r
36
Turn-Off Delay Time t
d(off)
34
Turn-Off Fall Time t
f
V
DD
= 10V, RL=5.5Ω
I
D
2.3A,V
GEN
= 4.5V
R
G
= 6
10
ns
Input Capacitance C
iss
340
Output Capacitance C
oss
115
Reverse Transfer Capacit a nce C
rss
V
DS
= 10V, V
GS
= 0V
f = 1.0 MHz
33
pF
Diode Forward Voltage V
SD
I
S
= 1.0A, V
GS
= 0V
Pulse test: pulse width <= 300us, duty cycle<= 2%
I
DSS
uA
Ω
50
80
^
1)
1)
1)
Symbol
Min. Typ.
Miax. Unit
1.2 V
1.1
2 -
2014-11
-
www.puolop.com
PT2302B
20V N-Channel Enhancement Mode MOSFET