PT2301B
VDS= -20V
RDS(ON), Vgs@-4.5V, Ids@-2.3A
Ω
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
130m
Ω
190m
Parameter Symbol Limit
Unit
Drain-Source Voltage
V
DS
-20
Gate-Source Voltage
V
GS
±8
V
Continuous Drain Current
I
D
-2.3
Pulsed Drain Current
1)
I
DM
-8
A
TA = 25
o
Maximum Power Dissipation
TA = 75
o
C
P
D
0.8
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
o
C
Junction-to-Ambient Thermal Resistance (PCB mounted)
3)
166
o
C/W
1.25
2)
Junction-to-Ambient Thermal Resistance (PCB mounted)
2)
100
R
R
thJA
Notes
Pulse width limited by maximum junction temperature.
Surface Mounted on FR4 Board, t v 5 sec.
Surface Mounted on FR4 Board.
1)
3)
2)
RDS(ON), Vgs@-2.5V, Ids@-2.0A
-20V P-Channel Enhancement Mode MOSFET
5030
0080
Millimeter
Millimet
er
REF.
Min.
Max.
REF.
Min. Max.
A 2. 3. G
B 2. 2. H 0.90 1.1
C 1.20 1.40 K 0.10 0.20
D 0.30 0.50 J 0.35
E 0 0.10 L 0.92
F 0.45 0.55 M 0° 10°
D
G
S
SOT-23
1.80
2.00
0.70
0.98
2012-7
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36
ELECTRICAL CHARACTERISTICS
Parameter Test Condition
Static
Drain-So urce Breakdown Voltage BV
DSS
V
GS
= 0V, I
D
= -250uA -20 V
Drain-So urce On-State Res istance
R
DS(on)
V
GS
= -4.5V, I
D
= -2.3A 105 130
V
GS
= -2.5V, I
D
= -2.0A 145 190
mΩ
Gate Threshol d Voltage V
GS(th)
V
DS
=V
GS
, I
D
= -250uA -0.45 V
Zero Gate Voltage Drain Current 0
V
DS
= -16V, V
GS
= 0V -1
Gate Body Leakage I
GSS
V
GS
= ± 8V, V
DS
= 0V ±100 nA
Forward Transconductan ce g
fs
V
DS
= -5V, I
D
= -2.3A 6.5 S
Dynamic
Total Gate Charge Q
g
5.8
Gate-Source Charge Q
gs
0.85
Gate-Drain Charge Q
gd
V
DS
= -6V, I
D
-2.3A
V
GS
= -4.5V
1.7
nC
Turn-On Delay Time t
d(on)
13
Turn-On Rise Time t
r
Turn-Off Delay Time t
d(off)
42
Turn-Off Fall Time t
f
V
DD
= -6V, RL=6Ω
I
D
-1.A, V
GEN
= -4.5V
R
G
= 6
34
ns
Input Capacitance C
iss
415
Output Capacitance C
oss
223
Reverse Transfer Capacit a nce C
rss
V
DS
= -6V, V
GS
= 0V
f = 1.0 MHz
87
pF
Source-Drain Diode
Max. Diode Forward Current I
S
Diode Forward Voltage V
SD
I
S
= -1.0A, V
GS
= 0V -1.2 V
Pulse test: pulse width <= 300us, duty cycle<= 2%
I
DSS
DS
= -16V, V
GS
= 0V TJ=55
o
C
V
-10
uA
Ω
-0.8
1)
1)
1)
^
^
Symbol Min.
Max.
Typ.
Unit
-1.6 A
2012-7
2 -
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www.puolop.com
PT2301B
-20V P-Channel Enhancement Mode MOSFET