Features Product Summary
Value Unit
150 V
2.1 V
105 A
5.7
m
7.1
m
Applications
Package # of Pins Marking MSL
T
J
(°C)
Media Quantity (pcs)
V-DFN5060-8 8 SL1507A 1 -55 to 150 13-inch Reel 3000
Symbol Unit
V
DS
V
V
GS
V
I
DM
A
I
AS
A
E
AS
mJ
T
J
, T
STG
°C
JMSL1507AGN-13
Value
Absolute Maximum Ratings
(@ T
A
= 25°C unless otherwise specified)
Parameter
JMSL1507AGN
150V 5.7m N-Ch Power MOSFET
Parameter
V
DS
V
GS(th)_Typ
I
D
(@ V
GS
= 10V)
(1)
R
DS(ON)_Typ
(@ V
GS
= 10V)
Ordering Information
Device
R
DS(ON)_Typ
(@ V
GS
= 4.5V)
A
Drain-to-Source Voltage 150
Gate-to-Source Voltage ±20
Junction & Storage Temperature Range -55 to 150
Power Dissipation
(4)
T
C
= 25°C
P
D
174
W
T
C
= 100°C
69
Avalanche Current
(3)
44
Avalanche Energy
(3)
484
Pulsed Drain Current
(2)
420
Continuous Drain
Current
(1)
T
C
= 25°C
I
D
105
T
C
= 100°C
66
• Low R
DS(ON)
• Low Gate Charge
• High Current Capability
• 100% UIS Tested, 100% R
g
Tested
0
5
10
15
20
25
0 4 8 12 16 20
R
DS(ON)
(m)
V
GS
(V)
0
2
4
6
8
10
0 1632486480
V
GS
(V)
Q
g
(nC)
R
DS
(
ON
)
vs. V
GS
Gate Charge
V
DS
= 75V
I
D
= 20A
• Power Management in Telecom., Industrial Automation, CE
• Current Switching in DC/DC & AC/DC (SR) Sub-systems
• Motor Driving in Power Tool, E-vehicle, Robotics
I
D
= 20A
Pin Configuration
Top View
G
D
S
1
2
3
4
8
7
6
5
Top View
Bottom View
V-DFN5060-8
Rev. 1.0
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Page 1 of 5
Symbol Min. Typ. Max. Unit
V
(BR)DSS
150 V
V
DS
= 120V, V
GS
= 0V
1.0
T
J
=
55°C
5.0
I
GSS
±100 nA
Gate Threshold Voltage
V
GS(th)
1.2 2.1 2.5 V
R
DS(ON)
5.7 7.1
m
R
DS(ON)
7.1 9.2
m
g
FS
48 S
V
SD
0.69 1.0 V
I
S
174 A
C
iss
4510 pF
C
oss
457 pF
C
rss
46 pF
R
g
2.2
Q
g
69 nC
Q
g
34 nC
Q
gs
16.5 nC
Q
gd
12.8 nC
t
D(on)
19.5 ns
t
r
62 ns
t
D(off)
86 ns
t
f
105 ns
t
rr
96 ns
Q
rr
273 nC
Symbol Unit
R
JA
°C/W
R
JC
°C/W
Notes:
A
Gate-Body Leakage Current
V
DS
= 0V, V
GS
= ±20V
Body Diode Reverse Recovery Time
I
F
= 20A, dI
F
/dt = 100A
/
s
Body Diode Reverse Recovery Charge
Zero Gate Voltage Drain Current
I
DSS
V
DS
= V
GS
, I
D
= 250A
Diode Continuous Current
V
GS
= 10V, I
D
= 20A
Forward Transconductance
V
DS
= 5V, I
D
= 20A
Diode Forward Voltage
I
S
= 1A, V
GS
= 0V
Output Capacitance
Reverse Transfer Capacitance
DYNAMIC PARAMETERS
(5)
JMSL1507AGN
Parameter Conditions
Drain-Source Breakdown Voltage
I
D
= 250A, V
GS
= 0V
STATIC PARAMETERS
Electrical Characteristics
(@ T
J
= 25°C unless otherwise specified)
Static Drain-Source ON-Resistance
T
C
= 25°C
Input Capacitance
V
GS
= 0V, V
DS
= 75V, f = 1MHz
Static Drain-Source ON-Resistance
V
GS
= 4.5V, I
D
= 15A
application board design.
Gate Resistance
V
GS
= 0V, V
DS
= 0V, f = 1MHz
Total Gate Charge (@ V
GS
= 10V)
V
GS
= 0 to 10V
V
DS
= 75V, I
D
= 20A
Total Gate Charge (@ V
GS
= 4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
V
GS
= 10V, V
DS
= 75V
R
L
= 3.75
,
R
GEN
= 6
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
60
0.72
50
0.42
I
F
= 20A, dI
F
/dt = 100A
/
s
Parameter
SWITCHING PARAMETERS
(5)
2. This single-pulse measurement was taken under T
J_Max
= 150°C.
3. This single-pulse measurement was taken under the following condition [L = 500H, V
GS
= 10V, V
DS
= 75V] while its value is limited by
4. The power dissipation P
D
is based on T
J_Max
= 150°C.
5. This value is guaranteed by design hence it is not included in the production test.
T
J_Max
= 150°C.
1. Computed continuous current assumes the condition of T
J_Max
while the actual continuous current depends on the thermal & electro-mechanical
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Typ.
Thermal Performance
Max.
Rev. 1.0
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Page 2 of 5