Features Product Summary
Value Unit
100 V
1.9 V
40 A
14.0
m
18.5
m
Applications
Package # of Pins Marking MSL
T
J
(°C)
Media Quantity (pcs)
TO251-3L 3 SL1018A N/A -55 to 150 Tube 80
TO252-3L 3 SL1018A 3 -55 to 150 13-inch Reel 2500
Symbol Unit
V
DS
V
V
GS
V
I
DM
A
I
AS
A
E
AS
mJ
T
J
, T
STG
°C
Pulsed Drain Current
(2)
116
Continuous Drain
Current
(1)
T
C
= 25°C
I
D
40
T
C
= 100°C
25
W
T
C
= 100°C
21
Avalanche Current
(3)
22
Avalanche Energy
(3)
24
Junction & Storage Temperature Range -55 to 150
Power Dissipation
(4)
T
C
= 25°C
P
D
52
A
Drain-to-Source Voltage 100
Gate-to-Source Voltage ±20
I
D
(@ V
GS
= 10V)
(1)
R
DS(ON)_Typ
(@ V
GS
= 10V)
Ordering Information
Device
R
DS(ON)_Typ
(@ V
GS
= 4.5V)
JMSL1018AK
JMSL1018AH
100V 14m N-Ch Power MOSFET
Parameter
V
DS
V
GS(th)_Typ
JMSL1018AH-U
Value
Absolute Maximum Ratings
(@ T
A
= 25°C unless otherwise specified)
Parameter
JMSL1018AK-13
• Low Gate Charge
• High Current Capability
• 100% UIS Tested, 100% R
g
Tested
0
30
60
90
120
150
0 5 10 15 20
R
DS(ON)
(m)
V
GS
(V)
0
2
4
6
8
10
03691215
V
GS
(V)
Q
g
(nC)
R
D
S(O
N
)
vs. V
GS
Gate Charge
V
DS
= 50V
I
D
= 20A
I
D
= 20A
G
D
S
TO252-3L Top View
G
D
S
TO251-3L Top View
G
D
S
• Power Managerment in Telecom., Industrial Automation, CE
• Current Switching in DC/DC & AC/DC Sub-systems
• Motor Driving in Power Tool, E-vehicle, Robotics
Rev. 1.1
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Page 1 of 6
Symbol Min. Typ. Max. Unit
V
(BR)DSS
100 V
V
DS
= 80V, V
GS
= 0V
1.0
T
J
=
55°C
5.0
I
GSS
±100 nA
Gate Threshold Voltage
V
GS(th)
1.2 1.9 2.5 V
R
DS(ON)
14.0 17.0
m
R
DS(ON)
18.5 23
m
g
FS
48 S
V
SD
0.7 1.0 V
I
S
52 A
C
iss
769 pF
C
oss
171 pF
C
rss
5.1 pF
R
g
1.9
Q
g
12.7 nC
Q
g
6.7 nC
Q
gs
2.1 nC
Q
gd
3.3 nC
t
D(on)
4.3 ns
t
r
5.1 ns
t
D(off)
16.7 ns
t
f
8.7 ns
t
rr
39 ns
Q
rr
30 nC
Symbol Unit
R
JA
°C/W
R
JC
°C/W
Notes:
1. Computed continuous current assumes the condition of T
J_Max
while the actual continuous current depends on the thermal & electro-mechanical
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
Typ.
Thermal Performance
Max.
50
2.4
42
1.8
2. This single-pulse measurement was taken under T
J_Max
= 150°C.
3. This single-pulse measurement was taken under the following condition [L = 100H, V
GS
= 10V, V
DS
= 50V] while its value is limited by
4. The power dissipation P
D
is based on T
J_Max
= 150°C.
5. This value is guaranteed by design hence it is not included in the production test.
T
J_Max
= 150°C.
application board design.
Gate Resistance
V
GS
= 0V, V
DS
= 0V, f = 1MHz
Total Gate Charge (@ V
GS
= 10V)
V
GS
= 0 to 10V
V
DS
= 50V, I
D
= 10A
Total Gate Charge (@ V
GS
= 6.0V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
V
GS
= 10V, V
DS
= 50V
R
L
= 2.5
,
R
GEN
= 6
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
I
F
= 15A, dI
F
/dt = 100A
/
s
Parameter
SWITCHING PARAMETERS
(5)
T
C
= 25°C
Input Capacitance
V
GS
= 0V, V
DS
= 50V, f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
DYNAMIC PARAMETERS
(5)
V
GS
= 4.5V, I
D
= 6A
Static Drain-Source ON-Resistance
JMSL1018AK
JMSL1018AH
Parameter Conditions
Drain-Source Breakdown Voltage
I
D
= 250A, V
GS
= 0V
STATIC PARAMETERS
Electrical Characteristics
(@ T
J
= 25°C unless otherwise specified)
A
Gate-Body Leakage Current
V
DS
= 0V, V
GS
= ±20V
Body Diode Reverse Recovery Time
I
F
= 15A, dI
F
/dt = 100A
/
s
Body Diode Reverse Recovery Charge
Zero Gate Voltage Drain Current
I
DSS
V
DS
= V
GS
, I
D
= 250A
Diode Continuous Current
V
GS
= 10V, I
D
= 10A
Forward Transconductance
V
DS
= 5V, I
D
= 20A
Diode Forward Voltage
I
S
= 1A, V
GS
= 0V
Rev. 1.1
JieJie Microelectronics Co., Ltd.
All product information are copyrighted and subject to legal disclaimers
Page 2 of 6