Transistors
www.kexin.com.cn
1
MOSFET
SMD Type
N-Channel Enhancement MOSFET
BSS127
0.4
+0.1
-0.1
2.9
+0.2
-0.1
0.95
+0.1
-0.1
1.9
+0.1
-0.2
2.8
+0.2
-0.1
+0.2
-0.1
12
3
Unit: mm
SOT-23-3
1.6
0.4
0.15
+0.02
-0.02
0.55
0-0.1
0.68
+0.1
-0.1
1.1
+0.2
-0.1
1. Gate
2. Source
3. Drain
Ƶ Absolute Maximum Ratings Ta = 25ć, unless otherwise specified
Symbol Rating Unit
V
DS
600
V
GS
±20
TA=25ć
0.021
TA=70ć
0.017
I
DM
0.09
I
D
=0.09A,
V
DS
=480V,
di/dt=200A/ȝs,
T
j,max
=150ć
P
tot
0.5 W
R
thJA
250
ć/W
T
J
150
T
stg
-55 to 150
Power Dissipation
Reverse diode dv/dt dv/dt 6 kV/ȝs
V
A
Pulsed Drain Current
Parameter
Continuous Drain Current I
D
Drain-Source Voltage
Gate-Source Voltage
Jun
ction Temperature
Storage Temperature Range
ć
Thermal Resistance.Junction- to-minimal footprint
Ƶ Features
ƽ N-Channel
ƽ Enhancement mode
ƽ Logic level
ƽ dv/dt rated
ƽ V
DS (V)
= 600V
ƽ I
D
= 0.021 A
ƽ R
DS(ON)
˘ 500ȍ
Transistors
www.kexin.com.cn
2
MOSFET
SMD Type
Ƶ Marking
Marking SI
Ƶ Electrical Characteristics Ta = 25ć, unless otherwise specified
Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage V
DSS
I
D
=250ȝA, V
GS
=0V 600 V
V
DS
=600V, V
GS
=0V 0.1
V
DS=600V, VGS=0V, TJ=150ć
10
Gate-Body Leakage Current I
GSS VDS=0V, VGS=±20V ±100 nA
Gate Threshold Voltage V
GS(th)
V
DS
=0V , I
D
=8ȝA 1.4 2.6 V
V
GS=10V, ID=0.016A 500
V
GS
=4.5V, I
D
=0.016A 600
Forward Transconductance g
FS
|V
DS
|
>2|I
D
|R
DS(on)max
, I
D
=0.01A
0.007 S
Input Capacitance C
iss
21 28
Out
put Capacitance C
oss
2.4 3
Reverse Transfer Capacitance C
rss 1.0 1.5
Gate Source Charge Q
gs
0.05 0.08
Gate Drain Charge Q
gd 1.2 1.8
Gate charge total Q
g
1.4 2.1
Gate plateau voltage V
plateau
3.5 V
Turn-On DelayTime t
d(on)
6.1 19.0
Turn-On Rise Time t
r
9.7 14.5
Turn-Off DelayTime t
d(off) 14 21
Turn-Off Fall Time t
f
115 170
Body Diode Reverse Recovery Time t
rr 160 240
Body Diode Reverse Recovery Charge Q
rr 13.2 19.8 nC
Maximum Body-Dio
de Continuous Current I
S 0.016
Diode Pulse Current I
S,pulse
0.09
Diode Forward Voltage V
SD
I
S
=0.016A,V
GS
=0V 1.2 V
ns
Drain-source leakage Current I
D(off)
ȝA
ȍ
V
GS
=10V, V
DS
=300V,
I
D
=0.01A,R
GEN
=6ȍ
R
DS(O
n
)
Static Drain-Source On-Resistance
nC
V
R=300V, IF= 0.016A,
di
F
/d
t
= 100A/ȝs
V
GS=0V, VDS=25V,
f=1MHz
V
DS
=400V, I
D
=0.01A,
V
GS
=0 to 10V
pF
A
N-Channel Enhancement MOSFET
BSS127