SMD Type
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1
MOSFET
N-Channel
MOSFET
BSS123
Ƶ Features
ƽ V
DS (V)
= 100V
ƽ I
D =0.17A(VGS =10V)
ƽ R
DS(ON) ˘ 6¡ (VGS =10V)
ƽ R
DS(ON) ˘ 10¡ (VGS =4.5V)
0.4
+0.1
-0.1
2.9
+0.1
-0.1
0.95
+0.1
-0.1
1.9
+0.1
-0.1
2.4
+0.1
-0.1
1.3
+0.1
-0.1
0-0.1
0.38
+0.1
-0.1
0.97
+0.1
-0.1
0.55
0.4
12
3
Unit: mm
SOT-23
0.1
+0.05
-0.01
1. Gate
2. Source
3. Drain
Ƶ Absolute Maximum Ratings Ta = 25ć
Parameter Symbol Rating Unit
Drain-Source Voltage V
DS 100
Gate-Source Voltage V
GS
±20
Continuous Drain Current I
D 0.17
Pulsed Drain Current I
DM 0.68
Power Dissipation P
D
0.36 W
Derate Above 25°C 2.8
mW/ć
Thermal Resistance, Junction-to-Ambient R
șJA
350 °C/W
Junction Temperature T
J 150
Storage Temperature Range T
stg -55to150
V
A
ć
ƽ ESD Protected 2KV HBM
SMD Type
www.kexin.com.cn
2
MOSFET
Electrical Characteristics Ta = 25
Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage V
DSS
ID=250 A, VGS=0V
100 V
V
DS=100V, VGS 1V0=
V
DS=100V, VGS=0V, TJ=55
60
Gate-Body Leakage Current I
GSS
VDS=0V, VGS=±20V ±10
VegatloVdlohserhTetaG
GS(th) VDS=VGS ,ID=1mA 0.8 2 V
V
GS=10V, ID 6A71.0=
V
GS=10V, ID=0.17A TJ=125
12
V
GS
=4.5V, I
D
01A71.0=
ItnerruCniarDetatSnO
D(ON) VGS=10V, VDS=5V 0.68 A
Forward Transconductance g
FS VDS=10V, ID=0.17A 0.08 S
CecnaticapaCtupnI
iss
73
CecnaticapaCtuptuO
oss
7
Reverse Transfer Capacitance C
rss 3.4
RecnatsiseRetaG
g VGS 2.2zHM1=f,Vm51=
QegrahCetaGlatoT
g 1.8 2.5
QegrahCecruoSetaG
gs 0.2
QegrahCniarDetaG
gd 0.3
temiTyaleDnO-nruT
d(on) 1.7 3.4
temiTesiRnO-nruT
r 918
temiTyaleDffO-nruT
d(off) 17 31
temiTllaFffO-nruT
f 2.4 5
Body Diode Reverse Recovery Time t
rr 11
Body Diode Reverse Recovery Charge Q
rr 3nC
Maximum Body-Diode Continuous Current I
S 0.17 A
VegatloVdrawroFedoiD
SD IS=0.34A,VGS V3.1V0=
Note.: Pulse Test: Pulse Width
300 us, Duty Cycle 2.0%
ns
Zero Gate Voltage Drain Current I
DSS
A
V
DD =30V,ID =0.28A,
V
GS =10V,RGEN =6
RDS(On)Static Drain-Source On-Resistance
I
F
=0.17A, d
I
/d
t
=100A/ s
V
GS
=0V, V
DS
=25V, f=1MHz
V
GS=10V, VDS=30V, ID=0.22A
pF
nC
Marking
Marking SA
N-Channel
MOSFET
BSS123
2.8