SMD Type
www.kexin.com.cn
1
MOSFET
N-Channel
MOSFET
BSS123
Features
V
DS (V)
=100V
I
D =0.17A(VGS = 10V)
R
DS(ON) 6 (VGS =10V)
R
DS(ON) 10 (VGS =4.5V)
Absolute Maximum Ratings Ta = 25
tinUgnitaRlobmySretemaraP
VegatloVecruoS-niarD
DS 100
VegatloVecruoS-etaG
GS
±20
ItnerruCniarDsuounitnoC
D 0.17
ItnerruCniarDdesluP
DM 0.68
PnoitapissiDrewoP
D
0.36 W
8.2C°52evobAetareD
mW/
Thermal Resistance, Junction-to-Ambient R
JA
350 °C/W
TerutarepmeTnoitcnuJ
J 150
TegnaRerutarepmeTegarotS
stg -55 to 150
V
A
ESD Protected 2KV HBM
1. Gate
2. Source
3. Drain
0.4
+0.1
-0.1
2.9
+0.2
-0.1
0.95
+0.1
-0.1
1.9
+0.1
-0.2
2.8
+0.2
-0.1
+0.2
-0.1
12
3
Unit: mm
SOT-23-3
1.6
0.4
0.15
+0.02
-0.02
0.55
0-0.1
0.68
+0.1
-0.1
1.1
+0.2
-0.1
SMD Type
www.kexin.com.cn
2
MOSFET
Electrical Characteristics Ta = 25
Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage V
DSS
ID=250 A, VGS=0V
100 V
V
DS=100V, VGS 1V0=
V
DS=100V, VGS=0V, TJ=55
60
Gate-Body Leakage Current I
GSS
VDS=0V, VGS=±20V ±10
VegatloVdlohserhTetaG
GS(th) VDS=VGS ,ID=1mA 0.8 2 V
V
GS=10V, ID 6A71.0=
V
GS=10V, ID=0.17A TJ=125
12
V
GS
=4.5V, I
D
01A71.0=
ItnerruCniarDetatSnO
D(ON) VGS=10V, VDS=5V 0.68 A
Forward Transconductance g
FS VDS=10V, ID=0.17A 0.08 S
CecnaticapaCtupnI
iss
73
CecnaticapaCtuptuO
oss
7
Reverse Transfer Capacitance C
rss 3.4
RecnatsiseRetaG
g VGS 2.2zHM1=f,Vm51=
QegrahCetaGlatoT
g 1.8 2.5
QegrahCecruoSetaG
gs 0.2
QegrahCniarDetaG
gd 0.3
temiTyaleDnO-nruT
d(on) 1.7 3.4
temiTesiRnO-nruT
r 918
temiTyaleDffO-nruT
d(off) 17 31
temiTllaFffO-nruT
f 2.4 5
Body Diode Reverse Recovery Time t
rr 11
Body Diode Reverse Recovery Charge Q
rr 3nC
Maximum Body-Diode Continuous Current I
S 0.17 A
VegatloVdrawroFedoiD
SD IS=0.34A,VGS V3.1V0=
Note.: Pulse Test: Pulse Width
300 us, Duty Cycle 2.0%
ns
Zero Gate Voltage Drain Current I
DSS
A
V
DD =30V,ID =0.28A,
V
GS =10V,RGEN =6
RDS(On)Static Drain-Source On-Resistance
I
F
=0.17A, d
I
/d
t
=100A/ s
V
GS
=0V, V
DS
=25V, f=1MHz
V
GS=10V, VDS=30V, ID=0.22A
pF
nC
Marking
Marking SA
N-Channel
MOSFET
BSS123
2.8