F2W005G - F2W10G
FAST RECOVERY GLASS
PASSIVATED BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 2.0 Amperes
FEATURES :
* Glass passivated chip
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Ideal for printed circuit board
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated leads solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 1.29 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
F2W
005G
F2W
01G
F2W
02G
F2W
04G
F2W
06G
F2W
08G
F2W
10G
UNIT
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage V
DC
50 100 200 400 600 800 1000 V
Maximum Average Forward Current
0.375" (9.5 mm) lead length Tc = 50
°
C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing ( t < 8.3 ms. )
I
2
t
10
A
2
S
Maximum Forward Voltage per Diode at IF = 1.0 A VF 1.3 V
Maximum DC Reverse Current Ta = 25 °C
I
R
10
µA
at Rated DC Blocking Voltage Ta = 100
°
C
IR(H) 1.0 mA
Maximum Reverse Recovery Time (Note 1) Trr 150 250 500 ns
Typical Junction Capacitance per Diode (Note 2) CJ 24 pf
Typical Thermal Resistance (Note 3)
R
θ
JA
36
°C/W
Operating Junction Temperature Range TJ - 50 to + 150
°
C
Storage Temperature Range TSTG - 50 to + 150
°
C
Notes :
1 ) Measured with I
F
= 0.5 Amp., I
R
= 1 Amp., Irr = 0.25 Amp.
2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
3 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board with, 0.22" x 0.22" (5.5 x 5.5 mm)
copper Pads.
Page 1 of 2 Rev. 02 : March 25, 2005
IFSM 30 A
RATING
IF(AV) 2.0 A
WOB
-
0.39 (10.0)
0.31 (7.87)
0.034 (0.86)
0.028 (0.71)
AC
+
1.10 (27.9)
MIN.
0.22 (5.59)
0.18 (4.57)
0.22 (5.59)
0.18 (4.57)
0.22 (5.59)
0.18 (4.57)
+
-
AC
AC
1.00 (25.4)
MIN.
Dimension in inches and (millimeter)
* Pb / RoHS Free
IATF 0113686
SGS TH07/1033
TH09/2479
TH97/2478
www.e icsemi.com
RATING AND CHARACTERISTIC CURVES ( F2W005G - F2W10G )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
+
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
FIG.2 - DERATING CURVE FOR OUTPUT FIG.3 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT FORWARD SURGE CURRENT
0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100
CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS FIG.5 - TYPICAL REVERSE CHARACTERISTICS
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
FORWARD VOLTAGE, VOLTS
Page 2 of 2 Rev. 02 : March 25, 2005
60 Hz, Resistive or Inductive
load.
1.6
0.8
0.4
2.0
10
10
1.0
24
0
30
0
12
6
0.01
1
80
0.01
0.1
0.1
100 140
0
20
40
60
120
PERCENT OF RATED REVERSE
VOLTAGE, (%)
PEAK FORWARD SURGE
CURRENT, AMPERES
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
FORWARD CURRENT, AMPERES
REVERSE CURRENT, MICROAMPERES
T
J
= 25
°
C
Pulse Width = 300
µ
s
1 % Duty Cycle
SINGLE HALF SINE WAVE
(JEDEC METHOD)
T
J
= 55
°
C
T
J
= 100
°
C
T
J
= 25
°
C
18
1.2
0.375(9.5mm)
Copper Pads
0.22" x 0.22"
(5.5 x5.5mm)
PC Board
20
SET TIME BASE FOR 50/100 ns/cm
Trr
+ 0.5
0
- 0.25
- 1.0 A
1
OSCILLOSCOPE
( NOTE 1 )
1 Ω
50
Ω 10
Ω
D.U.T.
50 Vdc
(approx)
PULSE
GENERATOR
( NOTE 2 )
IATF 0113686
SGS TH07/1033
TH09/2479
TH97/2478
www.e icsemi.com