P3M06040K3 SiC MOS
N-Channel Enhancement Mode
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Ver. 1B.0 Mar. 2022
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SiC MOS P3M06040K3
N-Channel Enhancement Mode
Features
Qualified to AEC-Q101
High Blocking Voltage with Low On-Resistance
High-Frequency Operation
Ultra-Small Q
gd
100% UIS tested
Benefits
Improve System Efficiency
Increase Power Density
Reduce Heat Sink Requirements
Reduction of System Cost
Applications
Solar Inverters
EV Battery Chargers
High Voltage DC/DC Converters
Switch Mode Power Supplies
Order Information
Part Number Package Marking
P3M06040K3 TO-247-3 P3M06040K3
V
RRM
= 650 V
I
D
= 68 A
I
D
(100) = 48 A
R
DS(on)
= 40 mΩ
Gate 1
Drain 2
Source 3
TO-247-3
1
2
3
www.pnjsemi.com
Ver. 1B.0 Mar. 2022
Page 2 of 14
P3M06040K3 SiC MOS
N-Channel Enhancement Mode
Contents
Features ........................................................................................................ 1
Benefits ......................................................................................................... 1
Applications ................................................................................................ 1
Order Information .................................................................................... 1
Contents..................................................................................... 2
1. Maximum Ratings ................................................................................ 3
2. Electrical Characteristics .................................................................... 4
3. Reverse Diode Characteristics ......................................................... 6
4. Thermal Characteristics ...................................................................... 6
5. Typical Performance ........................................................................... 7
6. Definitions ........................................................................................... 12
7. Package Outlines ............................................................................... 13