MUR1020CT
1 / 5
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
S-B1616
Rev.1.3,25-Dec-21
Ultra-Fast Recovery Diodes 5A*2 FRED Pt
Features
��� Adopt FRED chip
● Low forward Voltage drop
● Fast reverse recovery time
● High frequency operation
● High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
● Guard ring for enhanced ruggedness and long term reliability
Typical Applications
Typical applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
Mechanical Data
●
P
ackage: TO-220AB
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant
● Terminals: Tin plated leads, solderable per J-STD-
002 and JESD22-B102
● Polarity: As marked
■
Maximum Ratings
(Tj=25℃ Unless otherwise specified
）
PARAMETER SYMBOL UNIT
MUR1020CT
Device marking code
MUR1020CT
Repetitive Peak Reverse Voltage
V
RRM
V 200
Average Rectified Output Current
@60Hz sine wave, R-load, T
c
(FIG.1)
I
O
A
10
Surge(Non-repetitive)Forward Current
@60H
z
half sine-wave, 1 cycle, T
j
=25℃
I
FSM
A
50
Current Squared Time @1ms≤t≤8.3ms
Tj=25℃，
I
2
t
A
2
s
10
Storage Temperature
T
stg
℃
-55 ~ +175
Junction Temperature
T
j
℃
-55 ~ +175
Typical Junction capacitance @4V,1MHz
Cj
pF
50
COMPLIANT
RoHS
MUR1020CT
2 / 5
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
S-B1616
Rev.1.3,25-Dec-21
■Electrical Characteristics
PARAMETER SYMBOL
UNIT TEST CONDITIONS
Min Typ Max
Instantaneous forward voltage drop per diode
V
FM
V
I
FM
=5.0A @Tj=25℃
- 0.90 1.0
I
FM
=5.0A @Tj=150℃
0.78 0.90
DC reverse current at
rated DC blocking voltage per diode
I
RRM1
uA
V
RM
=V
RRM
Tj=25℃
- - 5
I
RRM2
V
RM
=V
RRM
Tj=150℃
- 25 50
Reverse Recovery Time Trr
ns
I
F
=0.5A I
RM
=1A
I
RR
=0.25A Tj=25℃
- 25 35
Tj=25℃
IF=5A
di/dt=-200A/us
V
RM
=100V
- 17.4 -
Tj=125℃
- 29.4 -
Peak recovery current I
RRM
A
Tj=25℃
- 3.11 -
Tj=125℃
- 5.43 -
Reverse recovery charge Qrr
nC
Tj=25℃
- 29.64 -
Tj=125℃
- 80 -
■
Thermal Characteristics （T
j
=25℃ Unless otherwise specified）
PARAMETER SYMBOL
UNIT
MUR1020CT
Thermal Resistance Between junction and case
R
θJ-C
℃/W
2.0
Thermal Resistance Between junction and Air
R
θJ-A
℃/W
50
■
Ordering Information (Example)
PREFERED P/N UNIT WEIGHT(g)
MINIIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY MODE
MUR1020CT
Approximate 1.88 50 1000 5000 Tube
■
Characteristics (Typical)
1 2 5 10 20 50 100
30
40
50
60
8.3ms Single
Half Sine-Wave
JEDEC Method
70
20
FIG2:Surge Forward Current Capability
Number of Cycles
Peak Forward Surge Current (A)
10
Case Temperature（℃）
Average Forward Output Current (A)
FIG1:Io -Tc Curve
0
0
50
100
150
2.5
5.0
7.5
10.0
12.5
15.0
17.5
200
TC measure point