Silicon Carbide MOSFET Datasheet
© 2022 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: TK. 04/05/22
1
LSIC1MO120E0160
1200V N-Channel, Enhancement-mode SiC MOSFET
■ High-frequency applications
■ Solar Inverters
■ Switch Mode Power Supplies
■ UPS
■ Motor Drives
■ High Voltage DC/DC
Converters
■ Battery Chargers
■ Induction Heating
Applications
Features
Circuit Diagram
Pb
RoHS
Resources Accessories Samples
Additional Information
Product Summary
Characteristics Value Unit
V
DS
1200 V
Typical R
DS(ON)
160
mΩ
I
D
( T
C
≤ 100 °C)
14 A
■ Optimized for high-frequency,
high-efficiency applications
■ Extremely low gate charge
and output capacitance
■ Low gate resistance for high-
frequency switching
■ Normally-off operation at all
temperatures
■ Halogen-free, lead-free, and
RoHS-compliant
21 3
*
* Body
diode
Silicon Carbide MOSFET Datasheet
© 2022 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: TK. 04/05/22
2
LSIC1MO120E0160
1200V N-Channel, Enhancement-mode SiC MOSFET
Characteristic Symbol Conditions Value Unit
Drain-Source Voltage V
DS
V
GS
= 0V 1200 V
Continuous Drain Current I
D
V
GS
= 20V, T
C
= 25 °C 20
A
V
GS
= 20V, T
C
= 100 °C 14
Pulsed Drain Current
1
I
D(pulse)
T
C
= 25 °C
45 A
Power Dissipation P
D
T
C
= 25 °C, T
J
= 175 °C
125 W
Gate-Source Voltage
V
GS,
MAX
Absolute maximum values - Steady state −6 to +22
VV
GS,
O P,
TR
2
Transient, t
transient
< 300 nsec −10 to +25
V
GS,
OP
3
Recommended DC operating values −5 to +20
Operating Junction Temperature T
J
− −55 to +175 °C
Storage Temperature T
STG
− −55 to +150 °C
Lead Temperature for Soldering T
sold
− 260 °C
Mounting Torque M
D
M3 or 6-32 screw
1. 0 Nm
8.8 in-lb
ESD Sensitivity Rating
HBM ESD Maximum Withstand Voltage 750
V
CDM ESD Maximum Withstand Voltage 1000
Maximum Ratings
Thermal Characteristics
Characteristic Symbol Value Unit
Maximum Thermal Resistance, junction−to−case R
th, JC,
MAX
1. 2 °C/W
Maximum Thermal Resistance, junction−to−ambient R
th, JA,
MAX
40 °C/W
Electrical Characteristics - Static Characteristics (T
J
= 25°C unless otherwise specified)
Characteristic Symbol Conditions
Value
Unit
Min Ty p Max
Drain-Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= 100 μA
1200 − −
V
Zero Gate Voltage Drain Current I
DSS
V
DS
= 1200, V
GS
= 0 V − <1 100
μA
V
DS
= 1200 V, V
GS
= 0 V, T
J
= 175 °C − <1 −
Gate Leakage Current
I
GSS, F
V
GS
= 22 V, V
DS
= 0 V − − 100
nA
I
GSS, R
V
GS
= -6 V, V
DS
= 0 V − − 100
Drain-Source On-State Resistance R
DS(ON)
I
D
= 10 A, V
GS
= 20 V − 160 200
mΩ
I
D
= 10 A, V
GS
= 20 V, T
J
= 175 °C − 230 −
Gate Threshold Voltage V
GS(TH)
V
DS
= V
GS
, I
D
= 5 mA 1. 8 2.8 4.0
V
V
DS
= V
GS
, I
D
= 5 mA, T
J
= 175 °C − 1. 8 −
Gate Resistance R
G
Resonance method, Drain-Source shorted
1
− 0.85 − Ω
1. Pulse width limited by T
J, MAX
2. See Figure 21 for further information
3. MOSFET can operate with V
GS(OFF)
= 0 V. V
GS(OFF)
= -5 V provides added noise margin and faster turn-off speed
Footnote 1. For a description of the resonance method for measuring R
G,
refer to the JEDEC Standard JESD24-11 test method.