This is information on a product in full production.
November 2014 DocID024952 Rev 4 1/12
HSP051-4M10
4-line ESD protection for high speed lines
Datasheet − production data
Figure 1. Functional schematic (top view)
Features
• Flow-through routing to keep signal integrity
• Ultralarge bandwidth: 10 GHz
• Ultralow capacitance:
– 0.2 pF (I/O to I/O)
– 0.35 pF (I/O to GND)
• Very Low dynamic resistance: 0.48 Ω
• 100 Ω differential impedance
• Low leakage current: 100 nA at 25 °C
• Extended operating junction temperatur
e
ran
ge: -40 °C to 150 °C
• Thin package: 0.5 mm max.
• RoHS compliant
Benefits
• High ESD protection level
• High integration
• Suitable for high density boards
Complies wit h following sta ndards
• MIL-STD 883G Method 3015-7 Class 3B:
–8 kV
• IEC 61000-4-2 level 4:
– 8 kV (contact discharge)
– 15 kV (air discharge)
Applications
The HSP051-4M10 is designed to protect against
electrostatic discharge on sub micron technology
circuits driving:
• HDMI 2.0 and 1.4
• USB 3.1 and USB3.0
• Digital Video Interfac
e
• Di
splay Port
• Serial ATA
Description
The HSP051-4M10 is a 4-channel ESD array with
a rail to rail architecture designed specifically for
the protection of high speed differential lines.
The ultralow variation of the capacitance ensures
very low influence on signal-skew. The large
bandwidth make it compatible with HDMI2.0.
4k/2k (=5.94 Gbps) and USB3.1 (= 10 Gbps).
The device is packaged in µQFN 2.5 mm x 1 mm
with a 500 µm pitch.
µQFN-10L (2.5 X 1.0 mm)
HSP051-4M10
I/O 1
I/O 2
GND
I/O 3
I/O 4
Internally
not connected
GND
Internally
not connected
1
2
4
5
6
8
9
10
3
7
www.st.com
Characteristics HSP051-4M10
2/12 DocID024952 Rev 4
1 Characteristics
Table 1. Absolute maxim um ratings T
amb
= 25 °C
Symbol Parameter Val ue Unit
V
PP
Peak pulse voltage
IEC 61000-4-2 contact discharge
IEC 61000-4-2 air discharge
8
25
kV
T
j
Operating junction temperature range -40 to +150 °C
T
stg
Storage temperature range -65 to +150 °C
T
L
Maximum lead temperature for soldering during 10 s 260 °C
Table 2. Electrical characteristics T
amb
= 25 ° C
Symbol Test condi ti ons Min. Typ. Max. Unit
V
BR
I
R
= 1 mA 4.5 5.8 V
I
RM
V
RM
= 3.6 V 10 100 nA
V
CL
I
PP
= 1 A, 8/20 µs 10 V
V
CL
IEC 61000-4-2, +8 kV contact (I
PP
= 16 A), measured at 30 ns 13 V
Rd Dynamic resistance, pulse duration 100 ns
I/O to GND 0.48
Ω
GND to I/O 0.96
C
I/O - I/O
V
I/O
= 0 V, F = 200 MHz to 9 GHz 0.2 0.3 pF
C
I/O - GND
V
I/O
= 0 V
F = 200 MHz to 2.5 GHz 0.4 0.55 pF
F = 2.5 GHz to 9 GHz 0.35 0.45 pF
f
C
-3dB 10 GHz
Z
diff
Time domain reflectometry: t
r
= 200 ps (10 - 90%), Z
0
= 100 Ω 85 100 115 Ω
Figure 2. Leakage current versus junction
tempera ture (typical valu es)
Figure 3. S21 attenuation measu rem en t
IR (nA)
1
10
100
25 50 75 100 125 150
T
j
(°C)
S21 (db)
100k 1M 10M 100M 1G 10G
-3
-2.5
-2
-1.5
-1
-0.5
0
0 V
2.5 V3.6 V
F (Hz)