This is information on a product in full production.
April 2014 DocID18055 Rev 3 1/10
HSP061-8M16
8-line ESD protection for high speed lines
Datasheet - production data
Features
• Ultralarge bandwidth: 6.3 GHz
• Ultralow capacitance: 0.6 pF
• Low time domain reflection
• Low leakage c urrent: 100 nA at 25 °C
• Ext ended operating jun ction tem peratur
e
ran
ge: -40 °C to 150 °C
• Pack age size in mm: 3.3 x 1.5 x 0.55
• RoHS compliant
Benefits
• High ESD robustn ess of the equipment
• Sui table for high density boards
Complies with following standards
• MIL-STD 883G Method 3015-7 Class 3B:
–8 kV
• IEC 61000-4-2 level 4:
– 8 kV (contact discharge)
– 15 kV (air discharge)
Applications
The HSP061-8M16 is designed to protect against
electrostatic discharge on sub micron technology
circuits driving:
• HDMI 1.3 and 1.4
• Digital Video Interfac
e
• Di
splay Port
• Serial ATA
Fi gure 1. Functional schem atic (top view)
Description
The HSP06 1-8M1 6 is an 8-channel ESD array
with a rail t o rai l architecture designed specifically
for the protection of high speed different ial lines.
The ultra-low variation of the capacitance ensures
very low influence on signal-skew. Th e large
bandwidth and the low reflection make it
compatible with 3.4 Gbps.
The device is packaged in µQFN -16L with a
400 µm pitch , which minimizes the PCB area.
µQFN-16L
In 1
In 2
In 3
In 4
In 5
In 6
In 7
In 8
Out 1
Out 2
Out 3
Out 4
Out 5
Out 6
Out 7
Out 8
GND on tab
1
2
4
5
6
3
7
8
16
15
13
12
14
10
9
11
www.st.com
Characteristics HSP061-8M16
2/10 DocID18055 Rev 3
1 Characteristics
Table 1. Absolute maxi m um ratings T
amb
= 25 °C
Symbol Parameter Value Unit
V
PP
Peak pulse voltage
(1)
IEC 61000-4- 2 conta ct di scharg e
IEC 61000-4- 2 air dischar ge
8
20
kV
I
pp
Repetitive peak pulse current (8/20 µs) 3 A
T
j
Operating junc tion temperat ure range -40 to +150 °C
T
stg
Storage temperature range -65 to +150 °C
T
L
Maxim um lead temperature for soldering during 10 s 260 °C
1. Meas urement s done on IEC 61000-4-2 test bench. For further details see Applica tion note AN 3353.
Table 2. Electrical characteristics T
amb
= 25 ° C
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
BR
Breakdown voltage I
R
= 1 mA 6 V
I
RM
Leakage current V
RM
= 3 V 100 nA
V
CL
Clamping volt age
IEC 6100 0-4-2, +8 kV co ntact (I
PP
= 30 A), measured at 30 ns
14 V
C
I/O - GND
Capacitance (input/out put to
ground)
V
I/O
= 0 V F = 200 to 3000 MHz,
V
OSC
= 30 mV
0.6 0.8 pF
ΔC
I/O - GND
Capacitance variation
(input/ou tput to ground )
V
I/O
= 0 V F = 200 to 3000 MHz,
V
OSC
= 30 mV
0.03 0.05 pF
f
C
Cut-off frequency -3dB 6.3 GHz
Z
Diff
Dif ferential imped ance
t
r
= 200 ps (10 - 90%)
(1)
Z
0 Dif f
= 100 Ω
90 105 Ω
1. HDMI specifica tio n conditions. This inf orma tio n can be provided for other appli c at ions. Please contact your local ST offi ce.