0.5W,5mAI
ZT
,BareDieZenerDiode
Silicon Planar Zener diode in bare die form – 5% tolerance, “C” grade
I
R
characterized at 125°C
Rev 1.0
07/07/17
Features: Die Dimensions in µm (mils)
330 (12.99)
Sharp Reverse Characteristics
210 (8.27)
Low Reverse Current Levels
High Reliability Gold Back Metal
Die Size (Unsawn) 330 x 330
12.99 x 12.99
µm
mils
Anode Pad Size 210 x 210
8.27 x 8.27
µm
mils
Die Thickness 200
7.87
µm
mils
Top Metal Composition Al
Back Metal Composition Au
High Reliability tested grades.
330 (12.99)
210 (8.27)
CHIP BACKSIDE IS CATHODE
Ordering Information
The following part suffixes apply:
ANODE
No suffix - MIL-STD-750 /2073 Visual Inspection
“H” - MIL-STD-750 /2073 Visual Inspection
+ MIL-PRF-38534 Class H LAT
“K” - MIL-STD-750 /2073 Visual Inspection
+ MIL-PRF-38534 Class K LAT
LAT = Lot Acceptance Test.
200
(7.87)
For further information on LAT process flows see below.
www.siliconsupplies.com\quality\bare-die-lot-qualification
Supply Formats: Mechanical Specification
Default – Die in Waffle Pack (400 per tray capacity)
Sawn Wafer on Tape – By specific request
Unsawn Wafer – By specific request
Tighter V
Z
tolerances:
2% - B grade, 1% - A grade – Specific request
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Absolute Maximum Ratings
1
T
A
= 25°C unless otherwise stated
PARAMETER SYMBOL VALUE UNIT
Power Dissipation
2
P
TOT
500 mW
Junction Temperature T
J
200 °C
Storage Temperature Range T
S
-65 to +200 °C
Forward Voltage @ I
F
= 100mA V
F
1.3 V
ZENER VOLTAGE
RANGE
TEST CURRENT REVERSE LEAKAGE CURRENT
DYNAMIC
RESISTANCE
Electrical Characteristics T
A
= 25°C unless otherwise stated
I
R
@ V
R
Z
Z
@ I
ZT1
Z
ZK
@ I
ZT2
V
Z
@ I
ZT1
I
ZT1
I
ZT2
T
A
= 25°C
T
A
= 125°C
f = 1 kHz
V Ω
DEVICE
mA µA Max. V
Min.
Nom. Max.
Max. Max.
BZX55C2V4 2.28 2.4 2.56 5 1 50.0 100 1.0 85 600
BZX55C2V7 2.5 2.7 2.9 5 1 10.0 50 1.0 85 600
BZX55C3V0 2.8 3.0 3.2 5 1 4.0 40 1.0 85 600
BZX55C3V3 3.1 3.3 3.5 5 1 2.0 40 1.0 85 600
BZX55C3V6 3.4 3.6 3.8 5 1 2.0 40 1.0 85 600
BZX55C3V9 3.7 3.9 4.1 5 1 2.0 40 1.0 85 600
BZX55C4V3 4.0 4.3 4.6 5 1 1.0 20 1.0 75 600
BZX55C4V7 4.4 4.7 5.0 5 1 0.5 10 1.0 60 600
BZX55C5V1 4.8 5.1 5.4 5 1 0.1 2.0 1.0 35 550
BZX55C5V6 5.2 5.6 6.0 5 1 0.1 2.0 1.0 25 450
BZX55C6V2 5.8 6.2 6.6 5 1 0.1 2.0 2.0 10 200
BZX55C6V8 6.4 6.8 7.2 5 1 0.1 2.0 3.0 8.0 150
BZX55C7V5 7.0 7.5 7.9 5 1 0.1 2.0 5.0 7.0 50
BZX55C8V2 7.7 8.2 8.7 5 1 0.1 2.0 6.2 7.0 50
BZX55C9V1 8.5 9.1 9.6 5 1 0.1 2.0 6.8 10 50
0.5W,5mAI
ZT
,BareDieZenerDiode
Rev 1.0
07/07/17
1. Operation above the absolute maximum rating may cause device failure. Operation at the absolute maximum ratings, for extended periods, may
reduce device reliability.
2. Assembled in DO-35 package. Performance in die form subject to assembly heat sinking and die attach methods.
Zener Voltages 10V to 75V are constructed using a larger die geometry.
Please see here for further details
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