0.5WZenerDiode‐ BZX55A*series
0.5W 5mA I
ZT
Silicon Planar Zener diode in bare die form – 1% tolerance, “A” grade
Tight tolerance reverse breakdown voltage
Rev 1.0
07/04/19
Features: Die Dimensions in µm (mils)
I
R
characterized at 125°C
Sharp reverse characteristics
Low reverse current Levels
High reliability gold back metal
330 (12.99)
330 (12.99)
210 (8.27)
CHIP BACKSIDE IS CATHODE
Ordering Information
The following part suffixes apply:
200
(7.87)
210 (8.27)
ANODE
For further information on LAT process flows see below.
www.siliconsupplies.com\quality\bare-die-lot-qualification
“K” - MIL-STD-750 /2073 Visual Inspection
+ MIL-PRF-38534 Class K LAT
LAT = Lot Acceptance Test.
“H” - MIL-STD-750 /2073 Visual Inspection
+ MIL-PRF-38534 Class H LAT
No suffix - MIL-STD-750 /2073 Visual Inspection
Supply Formats: Mechanical Specification
Die Size (Unsawn) 330 x 330
12.99 x 12.99
µm
mils
Default – Die in Waffle Pack (400 per tray capacity)
Anode Pad Size 210 x 210
8.27 x 8.27
µm
mils
Sawn Wafer on Tape – By specific request
Unsawn Wafer – By specific request
Lower precision V
Z
tolerances:
2% - B grade, 5% - C grade
Die Thickness 200
7.87
µm
mils
Top Metal Composition Al
Back Metal Composition Au
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Absolute Maximum Ratings
1
T
A
= 25°C unless otherwise stated
0.5WZenerDiode‐ BZX55A*series
Rev 1.0
07/04/19
PARAMETER SYMBOL VALUE UNIT
Power Dissipation
2
P
TOT
500 mW
Junction Temperature T
J
200 °C
Storage Temperature Range T
S
-65 to +200 °C
Forward Voltage @ I
F
= 100mA V
F
1.3 V
ZENER VOLTAGE
RANGE
TEST
CURRENT
REVERSE LEAKAGE CURRENT
DYNAMIC
RESISTANCE
I
R
@ V
R
Z
Z
@ I
ZT1
Z
ZK
@ I
ZT2
V
Z
@ I
ZT1
I
ZT1
I
ZT2
T
A
= 25°C
T
A
= 125°C
f = 1 kHz
V Ω
DEVICE
mA µA Max. V
Min.
Nom. Max.
Max. Max.
BZX55A2V4
2.376 2.4 2.424
5 1
50.0
100 1.0
85
600
BZX55A2V7
2.673 2.7 2.727
5 1
10.0
50 1.0
85
600
BZX55A3V0
2.97 3.0 3.03
5 1
4.0
40 1.0
85
600
BZX55A3V3
3.267 3.3 3.333
5 1
2.0
40 1.0
85
600
BZX55A3V6
3.564 3.6 3.636
5 1
2.0
40 1.0
85
600
BZX55A3V9
3.861 3.9 3.939
5 1
2.0
40 1.0
85
600
BZX55A4V3
4.257 4.3 4.343
5 1
1.0
20 1.0
75
600
BZX55A4V7
4.653 4.7 4.747
5 1
0.5
10 1.0
60
600
BZX55A5V1
5.049 5.1 5.151
5 1 0.1 2.0 1.0
35
550
BZX55A5V6
5.544 5.6 5.656
5 1 0.1 2.0 1.0
25
450
BZX55A6V2
6.138 6.2 6.262
5 1 0.1 2.0 2.0
10
200
BZX55A6V8
6.732 6.8 6.868
5 1 0.1 2.0 3.0
8.0
150
BZX55A7V5
7.425 7.5 7.575
5 1 0.1 2.0 5.0
7.0
50
BZX55A8V2
8.118 8.2 8.282
5 1 0.1 2.0 6.2 7.0 50
BZX55A9V1
9.009 9.1 9.191
5 1 0.1 2.0 6.8
10
50
Electrical Characteristics T
A
= 25°C unless otherwise stated
1. Operation above the absolute maximum rating may cause device failure. Operation at the absolute maximum ratings, for extended periods, may
reduce device reliability.
2. Assembled in DO-35 package. Performance in die form subject to assembly heat sinking and die attach methods.
Zener Voltages 10V to 75V are constructed using a larger die geometry.
Please see here for further details
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