© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 8
1 Publication Order Number:
MUR1620CT/D
MUR1610CTG, MUR1615CTG,
MUR1620CTG, MUR1640CTG,
MUR1660CTG
Switch Mode
Power Rectifiers
These state−of−the−art devices are a series designed for use in
switching power supplies, inverters and as free wheeling diodes.
Features
• Ultrafast 35 and 60 Nanosecond Recovery Times
• 175°C Operating Junction Temperature
• Popular TO−220 Package
• Epoxy Meets UL 94 V−0 @ 0.125 in
• High Temperature Glass Passivated Junction
• High Voltage Capability to 600 V
• Low Leakage Specified @ 150°C Case Temperature
• Current Derating @ Both Case and Ambient Temperatures
• These are Pb−Free Devices*
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−220AB
CASE 221A−09
3
4
1
ULTRAFAST RECTIFIERS
16 AMPERES, 100−600 VOLTS
1
3
2, 4
2
MARKING DIAGRAM
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
www.onsemi.com
AY WW
U16xxG
AKA
A = Assembly Location
Y = Year
WW = Work Week
U16xx = Device Code
xx = 10, 15, 20, 40 or 60
G = Pb−Free Package
KA = Diode Polarity
MUR1610CTG, MUR1615CTG, MUR1620CTG, MUR1640CTG, MUR1660CTG
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol
MUR16
Unit
10CT 15CT 20CT 40CT 60CT
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100 150 200 400 600 V
Average Rectified Forward Current Per Leg
Total Device, (Rated V
R
), T
C
= 150°C Total Device
I
F(AV)
8.0
16
A
Peak Rectified Forward Current Per Diode Leg
(Rated V
R
, Square Wave, 20 kHz), T
C
= 150°C
I
FM
16 A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
100 A
Operating Junction Temperature and Storage Temperature T
J
, T
stg
*65 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
THERMAL CHARACTERISTICS (Per Diode Leg)
Parameter
Symbol Value Unit
Maximum Thermal Resistance, Junction−to−Case
R
q
JC
3.0 2.0 °C/W
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Symbol 1620 1640 1660 Unit
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 8.0 A, T
C
= 150°C)
(i
F
= 8.0 A, T
C
= 25°C)
v
F
0.895
0.975
1.00
1.30
1.20
1.50
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, T
C
= 150°C)
(Rated DC Voltage, T
C
= 25°C)
i
R
250
5.0
500
10
mA
Maximum Reverse Recovery Time
(I
F
= 1.0 A, di/dt = 50 A/ms)
(I
F
= 0.5 A, I
R
= 1.0 A, I
REC
= 0.25 A)
t
rr
35
25
60
50
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%