Small-signal ultra-fast switching schottky diode in bare die form
Rev 1.0
01/02/19
70V15mASchottkyDiode
–
1N5711
Features: Die Dimensions in µm (mils)
130 (5.12)
300
(
11.81
)
180
A
NODE
ANODE
(7.09)
Picosecond switching speed
Low forward voltage drop
70V breakdown voltage
Guard-Ring for over-voltage protection
High reliability tested grades & matched
characteristic options.
Ordering Information
The following part suffixes apply:
No suffix - MIL-STD-750 /2073 Visual Inspection
“H” - MIL-STD-750 /2073 Visual Inspection
+ MIL-PRF-38534 Class H LAT
“K” - MIL-STD-750 /2073 Visual Inspection
+ MIL-PRF-38534 Class K LAT
LAT = Lot Acceptance Test.
For further information on LAT process flows see below.
www.siliconsupplies.com\quality\bare-die-lot-qualification
Supply Formats:
CHIP BACKSIDE IS CATHODE
Mechanical Specification
Default – Die in Waffle Pack (400 per tray capacity)
350 x 350
11.81 x 11.81
µm
mils
Die Size (with scribe line)
Sawn Wafer on Tape – By specific request
Unsawn Wafer – By specific request
Die Thickness <> 180µm(7 Mils) – On request
With additional electrical selection – On request
130 Ø
5.1 Ø
µm
mils
Anode Pad Size
180 (±15)
7.09 (±0.59)
µm
mils
Die Thickness
Top Metal Composition Al
Back Metal Composition AuAs
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70V15mASchottkyDiode
–
1N5711
Absolute Maximum Ratings
1
T
J
= 25°C unless otherwise stated
Rev 1.0
01/02/19
PARAMETER SYMBOL VALUE UNIT
Repetitive Peak Reverse Voltage V
RRM
70 V
Repetitive Peak Working Voltage V
RWM
70 V
DC Blocking Voltage V
R
70 V
DC Forward Current I
F
15 mA
Non-repetitive
Peak forward surge current
2
I
FSM
100 mA
Power Dissipation P
D
400 mW
Operating Junction temperature T
J
-65 to 150 °C
Storage Temperature Range T
STG
-65 to 200 °C
Electrical Characteristics T
J
= 25°C unless otherwise stated
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT
Breakdown Voltage
3
V
BR
I
R
= 10µA 70 - - V
I
F
= 1mA - - 0.41
Forward Voltage
3
-
- 1
V
V
F
I
F
= 15mA
Reverse Leakage
3
I
R
V
R
= 50V - - 200 nA
Junction Capacitance C
J
V
R
= 0V, f = 1MHz - - 2 pF
Reverse Recovery Time t
rr
I
F
= I
R
= 5mA,
I
rr
= 0.1 x I
R
, R
L
= 100Ω
-
- 1 ns
1. Operation above the absolute maximum rating may cause device failure. Operation at the absolute maximum ratings, for extended periods, may
reduce device reliability. 2. 8.3ms single half sine-wave. 3. Pulse test; tp≤300 μs
Typical Characteristics T
J
= 25°C unless otherwise stated
FIGURE 2. Reverse Current Versus Reverse Voltage
FIGURE 1. Forward Voltage Characteristics
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