SMD Type
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1
Diodes
0.4
+0.1
-0.1
2.9
+0.1
-0.1
0.95
+0.1
-0.1
1.9
+0.1
-0.1
2.4
+0.1
-0.1
1.3
+0.1
-0.1
0-0.1
0.38
+0.1
-0.1
0.97
+0.1
-0.1
0.55
0.4
1.Base
2.Emitter
3.collector
1 2
3
Unit: mm
SOT-23
0.1
+0.05
-0.01
1SS226
Features
Small Package
Low forward voltage :VF(3) = 0.9 V(Typ.)
Fast Reverse Recovery Time :trr = 1.6 ns(Typ.)
Small Total Capacitance :CT = 0.9pF(Typ.)
1 2
3
Switching Diodes
■
Absolute Maximum Ratings Ta = 25
℃
Parameter Symbol Rating Unit
Peak Reverse voltage V
RM
85
DC Blocking Voltage V
R
80
Average Rectified Output Current Io 100
Peak forward surge current I
FM
300
Power Dissipation P
D
150 mW
Junction Temperature T
J
150
Storage temperature range T
stg
-55 to 150
V
mA
℃
■
Electrical Characteristics Ta = 25
℃
Parameter Symbol Test Conditions Min Typ Max Unit
Reverse breakdown voltage V
R
I
R
= 100 uA 80
V
F1
I
F
= 1 mA 0.6
V
F2
I
F
= 10mA 0.72
V
F3
I
F
= 100 mA 0.9 1.2
I
R1
V
R
=30 V 0.1
I
R2
V
R
=80 V 0.5
Capacitance between terminals C
T
V
R
= 0 V, f= 1 MHz 0.9 3 pF
Reverse recovery time t
rr
I
F
=10mA 1.6 4 ns
Forward voltage
Reverse voltage leakage current uA
V
■ Marking
NO. 1SS226
Marking C3
SMD Type
www.kexin.com.cn
2
Diodes
Switching Diodes
1SS226
■
Typical Characterisitics