SMD Type
www.kexin.com.cn
1
Diodes
0.4
+0.1
-0.1
2.9
+0.1
-0.1
0.95
+0.1
-0.1
1.9
+0.1
-0.1
2.4
+0.1
-0.1
1.3
+0.1
-0.1
0-0.1
0.38
+0.1
-0.1
0.97
+0.1
-0.1
0.55
0.4
1.Base
2.Emitter
3.collector
12
3
Unit: mm
SOT-23
0.1
+0.05
-0.01
SILICON SWITCHING DIODE
1SS123
Absolute Maxim um Ratings Ta = 25
Param eter Sym bol Rating Unit
Peak Reverse Voltage V
RM 70 V
DC Reverse Voltage V
R 70 V
Peak Reverse Voltage I
FM 200 m A
Average Rectified Current I
O 100 m A
DC Forward Current I
F 100 m A
Junction Tem perature T
j 150
Storage Tem perature Range Tstg -55 to+ 150
Junction to A m bient* R 1.0
/m W
Junction to A m bient R
0.67
/m W
Electrical Characteristics Ta = 25
Parameter Symbol Test Condit i ons Min Typ Max Unit
I
F = 1.0 mA 600 715
I
F = 10 mA 750 855
I
F = 50 mA 855 1100
I
F = 100 mA 900 1300
Reverse current I
R VR =70V 1.0
A
Capacitance C
t VR =0,f=1.0MHz 2.5 4.0 pF
Reverse recovery time t
rr
IF = 100 m A,VR =1V,RL = 100
9.0 ns
Forward recovery voltage V
fr IF = 100 mA 1.75 V
mVV
FContinuous reverse voltage
Marking
Marking A7
Features
Low capacitance: Ct =4.0pFMAX
High speed switching: trr =9.0nsMAX.
Wide applications including switching,limitter,clipper.
Double diode configuration assures economical use.