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16.5 GHz fT Wideband NPN Chip
–
BFR391
Silicon NPN Planar RF Transistor in bare die form
High Power Gain
Low Noise
Wide Transition Frequency
Rev 1.5
16/08/20
Features:
NPN transistor in unencapsulated chip form. It is
primarily intended for use in RF wideband amplifiers,
such as in aerial amplifiers, radar systems,
oscilloscopes, spectrum analyzers, etc. The transistor
features low intermodulation distortion and high power
gain; due to its very high transition frequency, it also
has excellent wideband properties and low noise up to
high frequencies.
Description
Die Size (Unsawn)
350 x 350
13.78 x 13.78
µm
mils
Base Pad Size
65 x 65
2.65 x 2.65
µm
mils
Emitter Pad Size
210 x 65
8.27 x 65
µm
mils
Die Thickness
150 (±20)
5.90 (±0.78)
µm
mils
Top Metal Composition
Al 0.6µm
Back Metal Composition
Au 0.6µm
The following part suffixes apply:
No suffix - MIL-STD-750 /2072 Visual Inspection
“H” - MIL-STD-750 /2072 Visual Inspection
+ MIL-PRF-38534 Class H LAT
“K” - MIL-STD-750 /2072 Visual Inspection
+ MIL-PRF-38534 Class K LAT
LAT = Lot Acceptance Test.
For further information on LAT process flows see below.
www.siliconsupplies.com\quality\bare-die-lot-qualification
Supply Formats: Mechanical Specification
Default – Die in Waffle Pack (400 per tray capacity)
Sawn Wafer on Tape – By specific request
Unsawn Wafer – By specific request
With additional electrical selection – Specific request
Sawn as pairs – Specific request
Adjacent pair pick – Specific request
Die Dimensions in µm (mils)
Ordering Information
CHIP BACKSIDE IS COLLECTOR
BASE
210(8.27)
350(13.78)
350
(
13.78
)
65
(2.56)
65
(2.56)
65
(2.56)
EMITTER
d
16.5 GHz fT Wideband NPN Chip – BFR391
Rev 1.5
16/08/20
SYMBOL PARAMETER CONDITIONS MIN MAX
UNIT
V
CBO
collector-base voltage open emitter - 15 V
V
CEO
collector-emitter voltage open base
- 8 V
V
EBO
emitter-base voltage open collector
- 2 V
I
C
DC collector current - - 150 mA
P
tot
total power dissipation -
- 400 mW
T
stg
,T
J
storage & junction temperature -
-65 150 ºC
Absolute Maximum Ratings T
A
= 25°C unless otherwise stated
Electrical Characteristics T
A
= 25°C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN TYP MAX
SYMBOL
I
CBO
Collector cut-off current I
E
= 0 ; V
CB
= 5V - - 1 µA
I
EBO
Emitter cut-off current I
C
= 0 ; V
EB
= 1V - - 1 µA
h
FE
DC current gain I
C
= 50mA; V
CE
= 5V 60 95 150
f
T
Transition frequency
I
C
= 50mA; V
CE
= 5V;
f = 1GHz
13 16.5 - GHz
G
P
Power gain
I
C
= 50mA; V
CE
= 5V;
f = 1GHz
- 17.5 - dB
NF Noise figure
I
C
= 10mA; V
CE
= 1V;
f = 1 GHz
- 1.2 1.8 dB
C
re
Feedback capacitance
I
E
= 0; V
CB
=5V,
f = 1MHz
- 0.35 - pF
R
TH
(θJA)
Thermal resistance Infinite heatsink - 230 - ºC/W
Typical Characteristics T
A
= 25°C unless otherwise stated
FIGURE 9. Power Dissipation versus Ambient Temperature
FIGURE 1. Transition Frequency versus Collector Current FIGURE 2. Noise Figure versus Collector Current
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