BipolarPNP BareDie
–
BTP6005
Part Description
The BTP6005 is a silicon BJT transistor available in bare die form and well suited for use in general
purpose switching and amplifier applications. NPN complement is BTN6005
Key Parameters:
· VCBO = -40V
· VCEO = -32V
· VEBO = -5V
· hFE = 68-400 @ VCE = -3V, IC = -0.1A
· VCE(Sat) = -0.4V @ IC = -0.5A, IB = -50mA
· fT = 100 MHz @ VCE = -5V, IE = 0A
· COBO = 25pF @ VCB = -10V
Features
High VEBO. Designed to provide performance equivalent to ROHM 2SA934
Die Size (Unsawn)
650µm X 650µm, 26 Mils X 26 Mils
This is a shortform datasheet only
For the full datasheet
Please contact sales@siliconsupplies.com
DISCLAIMER: The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With
respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Silicon
Supplies Ltd hereby disclaims any and all warranties and liabilities of any kind.
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ersons ma
y
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