DATA SHEET
www.onsemi.com
© Semiconductor Components Industries, LLC, 2002
August, 2021 − Rev. 3
1 Publication Order Number:
SS8550/D
PNP Epitaxial Silicon
Transistor
SS8550
Features
• 2 W Output Amplifier of Portable Radios in Class B Push−Pull
Operation
• Complementary to SS8050
• Collector Current: I
C
= 1.5 A
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector−Base Voltage
V
CBO
−40
V
Collector−Emitter Voltage
V
CEO
−25
V
Emitter−Base Voltage
V
EBO
−6
V
Collector Current
I
C
−1.5
A
Junction Temperature
T
J
150
°
C
Storage Temperature
T
STG
−65 to 150
°
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
THERMAL CHARACTERISTICS (Note 1)
(T
A
= 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Power Dissipation
P
D
1
W
Power Dissipation Derate Above 25
°
C
P
D
8
mW/
°
C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
125
°
C/W
1. PCB size: FR−4, 76 mm x 1 14 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch)
with minimum land pattern size.
MARKING DIAGRAM
S8550x = Specific Device Code
Line 1: A = Assembly Location
Line 2: x = C or D
Line 3: Y = Year
WW= Work Week
1. Emitter
2. Base
3. Collector
TO−92−3
CASE 135AR
TO−92−3
CASE 135AN
1
2
3
1
2
3
AS8
550x
YWW
See detailed ordering and shipping information on page 2 o
f
this data sheet.
ORDERING INFORMATION
SS8550
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25
°
C unless otherwise noted)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BV
CBO
Collector−Base Breakdown Voltage
I
C
= −100
m
A, I
E
= 0
−40
V
BV
CEO
Collector−Emitter Breakdown Voltage
I
C
= −2 mA, I
B
= 0
−25
V
BV
EBO
Emitter−Base Breakdown Voltage
I
E
= −100
m
A, I
C
= 0
−6
V
I
CBO
Collector Cut−Off Current
V
CB
= −35 V, I
E
= 0
−100
nA
I
EBO
Emitter Cut−Off Current
V
EB
= −6 V, I
C
= 0
−100
nA
h
FE1
DC Current Gain
V
CE
= −1 V, I
C
= −5 mA
45
170
h
FE2
V
CE
= −1 V, I
C
= −100 mA
85
160
300
h
FE3
V
CE
= −1 V, I
C
= −800 mA
40
80
V
CE
(sat)
Collector−Emitter Saturation Voltage
I
C
= −800 mA, I
B
= −80 mA
−0.28
−0.50
V
V
BE
(sat)
Base−Emitter Saturation Voltage
I
C
= −800 mA, I
B
= −80 mA
−0.98
���1.20
V
V
BE
(on)
Base−Emitter On Voltage
V
CE
= −1 V, I
C
= −10 mA
−0.66
−1.00
V
C
ob
Output Capacitance
V
CB
= −10 V, I
E
= 0, f = 1 MHz
15
pF
f
T
Current Gain Bandwidth Product
V
CE
= −10 V, I
C
= −50 mA
100
200
MHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
h
FE
CLASSIFICATION
Classification
C
D
h
FE2
120 ~ 200
160 ~ 300
ORDERING INFORMATION
Part Number
Top Mark
Package
Shipping
SS8550CBU
S8550C
TO−92−3, case 135AN (Pb−Free)
10,000 Units/ Bulk Box
SS8550CTA
S8550C
TO−92−3, case 135AR (Pb−Free)
2,000 Units/ Fan−Fold
SS8550DBU
S8550D
TO−92−3, case 135AN (Pb−Free)
10,000 Units/ Bulk Box
SS8550DTA
S8550D
TO−92−3, case 135AR (Pb−Free)
2,000 Units/ Fan−Fold