DATA SHEET
www.onsemi.com
© Semiconductor Components Industries, LLC, 1998
January, 2022 − Rev. 6
1 Publication Order Number:
NDS7002A/D
N-Channel Enhancement
Mode Field Effect
Transistor
2N7000, 2N7002,
NDS7002A
Description
These N−channel enhancement mode field effect transistors are
produced using onsemi’s proprietary, high cell density, DMOS
technology. These products have been designed to minimize on−state
resistance while providing rugged, reliable, and fast switching
performance. They can be used in most applications requiring up to
400 mAdc and can deliver pulsed currents up to 2 A. These products
are particularly suited for low−voltage, low−current applications, such
as small servo motor control, power MOSFET gate drivers, and other
switching applications.
Features
• High Density Cell Design for Low R
DS(on)
• Voltage Controlled Small Signal Switch
• Rugged and Reliable
• High Saturation Current Capability
• This Device is Pb−Free and Halogen Free
See detailed ordering and shipping information on page 7 of
this data sheet.
ORDERING INFORMATION
MARKING DIAGRAM
TO−92
CASE 135AN
&E = Designates Space
&Y = Binary Calendar Year Coding Scheme
7x2 = Specific Device Code
x= 0, 1
&G = Date Code
S
D
G
&E&Y
7x2&E&G
SOT−23
CASE 318−08
$Y = Logo
&Z = Assembly Plant Code
&3 = Date Code
2N7000 = Specific Device Code
$Y&Z&3
2N
7000
1
2
3
1
2
3
TO−92
CASE 135AR
MARKING DIAGRAM
1 − Drain
2 − Gate
3 − Source
1 − Gate
2 − Source
3 − Drain
1
2
3
2N7000, 2N7002, NDS7002A
www.onsemi.com
2
ABSOLUTE MAXIMUM RATINGS Values are at T
C
= 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
2N7000 2N7002 NDS7002A
V
DSS
Drain−to−Source Voltage 60 V
V
DGR
Drain−Gate Voltage (R
GS
≤ 1 MW) 60 V
V
GSS
Gate−Source Voltage − Continuous ±20
V
Gate−Source Voltage − Non Repetitive (tp < 50 ms) ±40
I
D
Maximum Drain Current − Continuous 200 115 280
mA
Maximum Drain Current − Pulsed 500 800 1500
P
D
Maximum Power Dissipation Derated above 25°C
400 200 300 mW
3.2 1.6 2.4 mW/°C
T
J
, T
STG
Operating and Storage Temperature Range −55 to 150 −65 to 150 °C
T
L
Maximum Lead Temperature for Soldering Purposes,
1/16−inch from Case for 10 s
300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Values are at T
C
= 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
2N7000 2N7002 NDS7002A
R
θ
JA
Thermal Resistance, Junction to Ambient 312.5 625 417 °C/W
ELECTRICAL CHARACTERISTICS
Values are at T
C
= 25°C unless otherwise noted.
Symbol
Parameter Conditions Type Min. Typ. Max. Unit
OFF CHARACTERISTICS
BV
DSS
Drain−Source Breakdown
Voltage
V
GS
= 0 V, I
D
= 10 mA
All 60 − − V
I
DSS
Zero Gate Voltage Drain
Current
V
DS
= 48 V, V
GS
= 0 V
2N7000
− − 1
mA
V
DS
= 48 V, V
GS
= 0 V,
T
C
= 125°C
− − 1 mA
V
DS
= 60 V, V
GS
= 0 V
2N7002
NDS7002A
− − 1
mA
V
DS
= 60 V, V
GS
= 0 V,
T
C
= 125°C
− − 0.5 mA
I
GSSF
Gate − Body Leakage,
Forward
V
GS
= 15 V, V
DS
= 0 V 2N7000 − − 10
nA
V
GS
= 20 V, V
DS
= 0 V 2N7002
NDS7002A
− − 100
I
GSSR
Gate − Body Leakage,
Reverse
V
GS
= −15 V, V
DS
= 0 V 2N7000 − − −10
nA
V
GS
= −20 V, V
DS
= 0 V 2N7002
NDS7002A
− − −100
ON CHARACTERISTICS
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 1 mA 2N7000 0.8 2.1 3
V
V
DS
= V
GS
, I
D
= 250 mA
2N7002
NDS7002A
1 2.1 2.5