DATA SHEET
www.onsemi.com
© Semiconductor Components Industries, LLC,2004
February, 2022 − Rev. 3
1 Publication Order Number:
MMBD4148SE/D
Small Signal Diode
MMBD4148SE,
MMBD4148CC,
MMBD4148CA
Features
• These are Pb−Free Devices
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Maximum Repetitive Reverse Voltage V
RRM
100 V
Average Rectified Forward Current I
F(AV)
200 mA
Non−Repetitive Peak Forward
Surge Current
Pulse Width = 1.0 s
Pulse Width = 1.0 ms
I
FSM
1.0
2.0
A
Operating Junction Temperature Range T
J
−55 to +150 °C
Storage Temperature Range T
STG
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Value Unit
Power Dissipation P
D
350 mW
Thermal Resistance, Junction−to−Ambient R
q
JA
357 °C/W
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Breakdown Voltage
I
R
= 5.0 mA
I
R
= 100 mA
V
R
75
100
−
−
−
−
V
Forward Voltage
I
F
= 10 mA
V
F
− − 1.0
V
Reverse Leakage Current
V
R
= 20 V
V
R
= 20 V, T
A
= 150°C
V
R
= 75 V
I
R
−
−
−
−
−
−
25
50
5.0
nA
mA
mA
Total Capacitance
V
R
= 0 V, f = 1.0 MHz
C
T
− − 4.0
pF
Reverse Recovery Time
I
F
= 10 mA, V
R
= 6.0 V,
I
RR
= 1.0 mA, R
L
= 100 W
t
rr
− − 4.0
ns
Product parametric performance is indicated in the Electrical Characteristics for
the listed test conditions, unless otherwise noted. Product performance may not
be indicated by the Electrical Characteristics if operated under different conditions.
SOT−23 (TO−236)
CASE 318−08
1
2
3
1
DxM G
G
Dx = Device Code
x = 4, 5, 6
M = Assembly Operation Month
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
See detailed ordering and shipping information on page 4
of this data sheet.
ORDERING INFORMATION
CONNECTION DIAGRAMS
MMBD4148SE, MMBD4148CC, MMBD4148CA
www.onsemi.com
2
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 1. Reverse Voltage vs. Reverse Current
BV − 1.0 to 100 mA
Figure 2. Reverse Current vs. Reverse Voltage
IR − 10 to 100 V
Figure 3. Forward Voltage vs. Forward Current
VF − 1.0 to 100 mA
Figure 4. Forward Voltage vs. Forward Current
VF − 0.1 to 10 mA
1 2 3 5 10 20 10030 50
Figure 5. Forward Voltage vs. Forward Current
VF − 10 to 800 mA
110
120
130
140
150
Ta = 25°C
I
R
, REVERSE CURRENT (mA)
V
R
, REVERSE VOLTAGE (V)
0
50
100
150
200
250
300
10 20 30
50
70
10
0
V
R
, REVERSE VOLTAGE (V)
I
R
, REVERSE CURRENT (nA)
Ta = 25°C
250
300
350
400
450
1 2 3 5 10 20 10030 50
Ta = 25°C
I
F
, REVERSE CURRENT (mA)
V
F
, FORWARD VOLTAGE (mV)
450
500
550
600
650
700
Ta = 25°C
0.1 0.2 0.3 0.5 1 2 3 5 1
0
I
F
, FORWARD CURRENT (mA)
V
F
, FORWARD VOLTAGE (mV)
0.6
0.8
1.0
1.2
1.4
10 20
30 50
100 200 300 500
Ta = 25°C
I
F
, FORWARD CURRENT (mA)
V
F
, FORWARD VOLTAGE (V)
1.0
1.1
1.2
1.3
024
68
10
12 14
REVERSE VOLTAGE (V)
TOTAL CAPACITANCE (pF)
Ta = 25°C
Figure 6. Total Capacitance vs. Reverse Voltage