HITANO ENTERPRISE CORP.
BZV55C2V4 THRU BZV55C39
TECHNICAL
SPECIFICATIONS
OF
GLASS
SILICON
ZENER
DIODES
FEATURES
* V oltage Range:2.4V to 39V
* Double slug type construction
DL-35
MECHANICAL DATA
* Case: Glass sealed case
* Terminals:Solder plated, solderable per
MIL-STD-750, Method 2026
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.05 gram
.142(3.6)
.134(3.4)
.016(0.4)
.008(0.2)
.016(0.4)
.008(0.2)
CATHODE MARK
.059(1.5)
.055(1.4)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unl ess otherwise speci fied.
Single phase, half wave, 60 Hz, resistive or inductive
load.
For capacitive load, derate current by 20%.
Dimensions
in
inches
and
(millim eters)
SYMBOL VALUE UNITS
Zener Current see Table "Characterisitics"
Power Dissipation at Tamb=25
o
C
Ptot
500
(1)
mW
Junction Temperature Tj 175
o
C
Storage Temperature Range Tstg -55 to + 175
o
C
Thermal Resistance
Junction to Ambient Air
RthA
-
-
0.3
(1)
K/mW
Typ.
Min.
Max.
Forward Voltage
at IF=100mA
VF
-
-
1
Volts
Typ .
Min.
Max.
1)Valid Pro vided that leads are kept at ambient temperature at a distance of 8 mm from case.
NOTE: Standard Zener Voltage Tolerance
±
5%
RATING AND CHARACTERISTIC CURVES (BZV55C SERIES)
Maximum
Zener
Impedance
Maximum
Reverse
Leakage
Current
Nominal
Zener
Voltage
VZ
@
IZT
Zener
Test
Current
IZT
ZZT
@
IZT ZZT
@
IZK
IZK
IR
@
VR
Typical
Temperature
Coefficient
Maximum
Regulator
Current
IZM
Min
Max mA
Ohms Ohms m
A
uA Volts
%
/
o
C mA
BZV55C2V4 2.28 2.56 5 85 600 1 50 1 -0.085 155
BZV55C2V7 2.5 2.9 5 85 600 1 10 1 -0.080 135
BZV55C2V0 2.8 3.2 5 85 600 1 4 1 -0.075 125
BZV55C3V3 3.1 3.5 5 85 600 1 2 1 -0.070 115
BZV55C3V6 3.4 3.8 5 85 600 1 2 1 -0.065 105
BZV55C3V9 3.7 4.1 5 85 600 1 2 1 -0.060 95
BZV55C4V3 4.0 4.6 5 75 600 1 1 1
±0.055
90
BZV55C4V7 4.4 5.0 5 60 600 1 0.5 1
±0.030
85
BZV55C5V1 4.8 5.4 5 35 550 1 0.1 1
±0.030
80
BZV55C5V6 5.2 6.0 5 25 450 1 0.1 1 +0.038 70
BZV55C6V2 5.8 6.6 5 10 200 1 0.1 2 +0.045 64
BZV55C6V8 6.4 7.2 5 8 150 1 0.1 3 +0.050 58
BZV55C7V5 7.0 7.9 5 7 50 1 0.1 5 +0.058 53
BZV55C8V2 7.7 8.7 5 7 50 1 0.1 6.2 +0.062 74
BZV55C9V1 8.5 9.6 5 10 50 1 0.1 6.8 +0.068 43
BZV55C10 9.4 10.6 5 15 70 1 0.1 7.5 +0.075 40
BZV55C 11 10.4 11 .6 5 20 70 1 0.1 8.2 +0.076 36
BZV55C12 11 . 4 12.7 5 20 90 1 0.1 9.1 +0.077 32
BZV55C13 12.4 14.1 5 26 11 0 1 0.1 10 +0.079 29
BZV55C15 13.8 15.6 5 30 11 0 1 0.1 1 1 +0.082 27
BZV55C16 15.3 17.1 5 40 170 1 0.1 12 +0.083 24
BZV55C18 16.8 19.1 5 50 170 1 0.1 12 +0.085 21
BZV55C20 18.8 21.2 5 55 220 1 0.1 15 +0.086 20
BZV55C22 20.8 23.3 5 55 220 1 0.1 16 +0.087 18
BZV55C24 22.8 25.6 5 80 220 1 0.1 18 +0.088 16
BZV55C27 25.1 28.9 5 80 220 1 0.1 20 +0.090 14
BZV55C30 28 32 5 80 220 1 0.1 22 +0.091 13
BZV55C33 31 35 5 80 220 1 0.1 24 +0.092 12
BZV55C36 34 38 5 80 220 1 0.1 27 +0.093 11
BZV55C39 37 41 2.5 90 500 0.5 0.1 30 +0.094 10
changes
in
the
power
dissipation
due
to
the
ambient
temperature.
500
400
Breakdow n
charact eristics
BZV55-SERIES
mA
5V
10V
15V
20V
25V
30V
50
40
IZ
30
300
200
100
20
10
50
100
150
200
300
Ta(
o
C)
0
Ambient
Temperature.
Test
Current
IZ
5mA
VZ