SOT
-
36
3 Plastic-Encap
sulate
MOSFET
S
2N7002KDW
N-channel MOSFET
SOT
-363
FEATURE
z
High density cell design fo
r Low R
DS
（
on
）
z
Voltage controlled small signal switch
z
Rugged and reliable
z High saturation current capability
MOSFET MAXIMUM RATINGS (T
a
= 25
°C unless otherwise noted)
Symbol Para
meter Value
Unit
V
DS
Drain-So
urce voltage
60 V
I
D
Drain
C
u
rre
nt 340
mA
P
D
Pow
er Dissipation 0.15 W
T
J
Junctio
n
T
e
mperature 150
℃
T
stg
Storage Te
mperature -55-150
℃
R
θJA
Thermal Resist
ance fromJunction to Ambient 833
℃ /W
z
ESD protected
V
GS
Gate-Source
voltage
±20 V
MARKING
Equivalent Circuit
APPLICATION
z
z
Load Switch for Portable Devices
DC/DC Converter
V
(BR)
DSS
R
DS(on)
MAX
I
D
60
V
2.5
Ω
@
10V
340m
A
3Ω
@
4.5V
1
2
3
6
5
4
72K
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LT
D
1
www.jscj-elec.com
Rev. - 1.0
Para
meter Symbol Test Condition Min Typ Max Units
Static Ch
aracteristics
Drain-S
ource Breakdown Voltage VDS
V
GS
= 0
V, ID
=
250µA 60 V
Gate T
hreshold Voltage* V
GS(th)
V
DS
=V
GS
, I
D
=1mA 1 1.3 2.5
V
Z
ero Gate Voltage Drain Current I
DSS
V
DS
=
48V,V
GS
=
0V 1 µA
I
GSS1
V
GS
=
±20V, V
DS
= 0
V ±10 µA
Gate –Source l
eakage current
V
GS
= 4.5V, I
D
=200mA
1.1
3
Ω
Drain-Source On-Resistance* R
DS(on)
V
GS
=10V,I
D
=500mA 0.9
2.5
Ω
Diod
e Forward Voltage VSD
V
GS
=0
V, IS
=
300mA 1.5 V
Recover
ed charge Q
r
V
GS
=0
V,I
S
=
300mA,V
R
=
25V,
dl
s/dt=
-100A/µs
30 nC
D
ynamic Characteristics**
Input Cap
acitance C
iss
40 pF
Output Capac
itance C
oss 30 pF
Reverse T
ransfer Capacitance C
rss
V
DS
=
10V,V
GS
=0
V,f
=1
MHz
10 pF
S
witching Characteristics**
T
urn-On Delay Time t
d(
on)
10
ns
T
urn-Off Delay Time t
d(
off)
V
GS
=
10V,V
DD
=
50V,R
G
=5
0Ω,
R
GS=5
0Ω, R
L=250Ω
15
ns
Reverse rec
overy Time t
rr
V
GS
=0
V,I
S
=
300mA,V
R
=
25V,
dl
s/dt=
-100A/µs
30 ns
G
A
TE-SOURC
E ZENER DIODE
Gate-Source B
reakdown Voltage BV
GSO
I
gs
=
±1mA (Open Drain) ±21.5 ±30 V
No
tes :
*Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%.
**These parameters have no way to verify.
MOSFET ELECTRICAL CHARACTERISTICS
a
T =25
℃
unless otherwise specified
2
www.jscj-elec.com
Rev. - 1.0