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1
General Description
The G11 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as
a load switch.
Product Summary
Symbol
V
DS
V
GS
I
DM
T
J
, T
STG
W
3
T
A
=25°C
T
A
=70°C
Power Dissipation
B
P
D
Pulsed Drain Current
C
Continuous Drain
Current
T
A
=25°C
A
I
D
-12
-12
-105
V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V±8Gate-Source Voltage
Drain-Source Voltage -12
°C
1.6
T
A
=70°C
Junction and Storage Temperature Range -55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJL
Maximum Junction-to-Lead
°C/W
°C/W
Maximum Junction-to-Ambient
A D
32
90
40
Maximum Junction-to-Ambient
A
°C/W
R
θJA
48
74
62.5
Thermal Characteristics
UnitsParameter Typ Max
Pin1
Schematic diagram
SOP-8
With ESD.
G11
GOFORD
V
DSSRDS(ON)
12
A
-12
-4.5V
@
(Typ)
Ωm
-12V
RDS(ON)
-2.5V
(Typ)
@
21
Ωm
ID
HTTP://www.gofordsemi.comTEL：0755-29961262FAX：0755-29961466
Symbol Min Typ Max Units
BV
DSS
-12 V
V
DS
=-12V, V
GS
=0V -1
T
J
=55°C -5
I
GSS
±10 A
V
GS(th)
Gate Threshold Voltage
-0.4 -0.7 -1.0 V
I
D(ON)
-60 A
12 18
T
J
=125°C 14 20
21 27 mΩ
g
FS
45 S
V
SD
-0.56 -1 V
I
S
-3 A
C
iss
1390 1740 2100 pF
C
oss
230 334 435 pF
C
rss
120 200 280 pF
R
g
0.9 1.3 1.7 kΩ
Q
g
(4.5V) 15 19 23 nC
Q
gs
3.6 4.5 5.4 nC
Q
gd
3 5.3 7.4 nC
t
D(on)
240 ns
t
r
580 ns
t
D(off)
7 µs
t
f
4.2 µs
t
rr
18
22 26 ns
Q
rr
14
17 20
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250µA, V
GS
=0V
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-9A
Reverse Transfer Capacitance
I
F
=-9A, dI/dt=500A/µs
V
GS
=0V, V
DS
=-6V, f=1MHz
SWITCHING PARAMETERS
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
I
DSS
µA
V
DS
=V
GS
I
D
=-250µA
V
DS
=0V, V
GS
= ±8V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Forward Transconductance
Diode Forward Voltage
R
DS(ON)
Static Drain-Source On-Resistance
mΩ
I
S
=-1A,V
GS
=0V
V
DS
=-5V, I
D
=-9A
V
GS
=-2.5V, I
D
=-6.2A
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
V
GS
=-4.5V, V
DS
=-6V, I
D
=-9A
Gate Source Charge
Gate Drain Charge
Body Diode Reverse Recovery Charge
I
F
=-9A, dI/dt=500A/µs
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=-4.5V, V
DS
=-6V, R
L
=0.67Ω,
R
GEN
=3Ω
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25°C.
D. The R
��JA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse ratin g.
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u
G11
GOFORD
HTTP://www.gofordsemi.comTEL：0755-29961262FAX：0755-29961466