CHX1162-QDG
Ref. : DSCHX1162-QDG2201 - 19 jul 12
1/10
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
20-40GHz Frequency Multiplier
GaAs Monolithic Microwave IC
Description
The CHX1162-QDG is a packaged
monolithic time two multiplier which
integrates input and output buffer.
This circuit is a very versatile multiplier for
telecommunication and specifically for
E-band LO chain. Moreover it is proposed in
standard surface mount package and
integrates ESD protection. The overall power
supply is of +5V/ 50mA.
It is developed on a robust 0.15µm gate
length pHEMT process, and will be available
in a standard SMD package.
Main Features
Broadband performances: 17.5-21.5GHz
8dBm Pout for +1dBm input power
DC bias: V+=5Volt, V- = -5V@Id=50mA
24L-QFN4x4
Main Electrical Characteristics
Tamb.= +25°C
Symbol
Min
Typ
Max
Unit
Fin
17.5
21.5
GHz
Fout
35
43
GHz
Pin
+1
dBm
Pout_H2
8
dBm
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
16 18 20 22 24
Output power (dBm)
Input Frequency (GHz)
2F0
F0
Pin= +1dBm
CHX1162-QDG
20-40GHz Frequency Multiplier
Ref. : DSCHX1162-QDG2201 - 19 jul 12
2/10
Specifications subject to change without notice
Bât. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France
Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34
Electrical Characteristics
Tamb.= +25°C, V+ = +5V
Symbol
Min
Typ
Max
Unit
Fin
17.5
21.5
GHz
Fout
35
43
GHz
Pin
+1
dBm
Pout_H2
8
dBm
Rej_H1
40
dBc
RL _in
-12
dB
RL_out
-6
dB
V+
+5
V
V-
-5
V
Id
50
mA
These values are representative of onboard measurements as defined on the drawing in
paragraph "Evaluation mother board".
Absolute Maximum Ratings
(1)
Tamb.= +25°C
Symbol
Parameter
Values
Unit
V+
Positive bias voltage
5.5
V
V-
Negative bias voltage
-6
V
Id
DC current
80
mA
Pin
Maximum input power
+6
dBm
Tj
Junction temperature
175
°C
Ta
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +150
°C
(1)
Operation of this device above anyone of these parameters may cause permanent
damage.