CHX2193
RoHS COMPLIANT
Ref. : DSCHX21930036 - 05 Feb 10 1/6 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
7.5-15GHz Frequency Multiplier
GaAs Monolithic Microwave IC
Description
The CHX2193 is a frequency multiplier by 2
monolithic circuit.
It is designed for a wide range of applications,
from military to commercial communication
systems. The backside of the chip is both RF
and DC ground. This helps to simplify the
assembly process.
The circuit is manufactured with a pHEMT
process, 0.25µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
Main Features
■ Broadband performance: 6.25-8.25 GHz
■ 12dBm output power for +12dBm input power
■ DC power consumption, 60mA @ 3.5V (with
RF)
■ Chip size: 1.62 x 0.89 x 0.10 mm
Main Characteristics
Tamb. = 25°C
Symbol Parameter Min Typ Max Unit
F
in
Input frequency range 6.25 8.25 GHz
F
out
Output frequency range 12.5 16.5 GHz
P
in
Input power 12 dBm
P
out
Output power for +12dBm input power 10 12 16 dBm
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
CHX2193
7.5-
15GHz Frequency Multiplier
Ref. : DSCHX21930036 - 05 Feb 10 2/6 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics
T
amb
= +25°C, V
g1
= -0.9V, V
g2
adjusted for I
d
= 60mA under RF, P
in
=+12dBm
Symbol Parameter Min Typ Max Unit
F
in
Input frequency range 6.25 8.25 GHz
F
out
Output frequency range 12.5 16.5 GHz
P
in
Input power 12 dBm
P
out
Output power for +12 dBm input power 10 12 16 dBm
I
s
/F
o
F
in
level at the output ( 6.25 < F
in
< 8.25GHz ), for
+12dBm input power
-8 -16 -30 dBm
VSWR
in
Input VSWR 2.5:1
VSWR
out
Output VSWR 2.5:1
V
d
Drain bias voltage 3.5 V
I
d
Bias current (with RF) 60 mA
A wire bond of typically 0.1 to 0.15nH will improve the input and output matching.
Absolute Maximum Ratings
Tamb = +25°C
Symbol Parameter Values Unit
V
d
Drain bias voltage 4.0 V
I
d
Drain bias current 150 mA
T
a
Operating temperature range (1) -40 to +85 °C
T
stg
Storage temperature range -55 to +125 °C
Operation of device above anyone of these parameters may cause permanent damage.
(1) Reference: backside of the chip