CHA2157
RoHS COMPLIANT
Ref. : DSCHA21577150 - 30 May 07 1/6 Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
55-60GHz Low Noise / Medium Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2157 is a two stage low noise and
medium power amplifier. It is designed for a wide
range of applications, from military to
commercial communication systems. The
backside of the chip is both RF and DC
grounded. This helps simplify the assembly
process.
The circuit is manufactured with a pHEMT
process, 0.15µm gate length, via holes through
the substrate, air bridges and electron beam
gate lithography.
It is available in chip form.
Main Features
■
3.5 dB noise figure
■ 10 dB ± 1dB gain
■ 15 dBm output power @ -1dB gain comp.
■ DC power consumption, 80mA @ 3.3V
■ Chip size: 1.71 x 1.04 x 0.10 mm
-20
-15
-10
-5
0
5
10
15
55 56 57 58 59 60
Frequency (GHz)
Gain & Rloss (dB)
Gain
S11
S22
Typical on Wafer Measurements
Main Characteristics
Tamb. = 25°C
Symbol Parameter Min Typ Max Unit
Fop Operating frequency range 55 60 GHz
G Small signal gain 8 10 12 dB
NF Noise figure 3.5 4.5 dB
P1dB Output power at 1dB gain compression 13 15 dBm
Id Bias current 80 150 mA
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
CHA2157
55-60GHz Low Noise Amplifier
Ref. : DSCHA21577150 - 30 May 07 2/6 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Electrical Characteristics for Broadband Operation
Tamb = +25°C, Vd = 3.3V
Symbol Parameter Min Typ Max Unit
Fop Operating frequency range (1) 55 60 GHz
G Small signal gain (1) 8 10 12 dB
∆
G
Small signal gain flatness (1)
±
1.0
±
2.0
dB
Is Reverse isolation (1) 20 25 dB
NF Noise figure 3.5 4.5 dB
P1dB CW output power at 1dB compression (1) 13 15 dBm
VSWRin Input VSWR (1) 3.0:1 6.0:1
VSWRout Output VSWR (1) 3.0:1 6.0:1
Vd DC Voltage 3.3 3.8 V
Id Bias current 80 150 mA
(1) These values are representative for CW on-wafer measurements that are made without
bonding wires at the RF ports.
A wire bond of typically 0.1 to 0.15nH will improve the input and output matching.
Absolute Maximum Ratings
Tamb. = 25°C (1)
Symbol Parameter Values Unit
Vd Drain bias voltage 4.0 V
Id Drain bias current 150 mA
Vg Gate bias voltage -2.0 to +0.4 V
Pin Maximum peak input power overdrive (2) +15 dBm
Ta Operating temperature range -40 to +85 °C
Tstg Storage temperature range -55 to +155 °C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s.