SEMICONDUCTOR
TECHNICAL DATA
MCR100-6/F , -8/F
2011. 12. 06 1/2Revision No : 0
Silicon Planar PNPN Thyristor
MAIN FEATURES
Symbol Value Unit
I
T(RMS)
A 8.0
MCR100-6/F 400
V
DRM
/V
RRM
MCR100-8/F 600
V
T
J
Junction Temperature -40 to 125
℃
T
stg
Storage Temperature -55 to 150
℃
DESCRIPTION
Logic level sensitive gate triac intended
to be interfaced directly to microcontrollers,
logic integrated circuits
and other low power gate trigger circuits.
FEATURES
Blocking voltage to 400 V (MCR100-6/F) , 600V (MCR100-8/F)
RMS on-state current to 0.8 A
General purpose switching
APPLICATIONS
General purpose switching
Phase control applications
Solid state relays.
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
On state voltage *
V
TM
I
TM
=1A 1.7 V
Gate trigger voltage
V
GT
V
AK
=7V 0.8 V
Peak Repetitive forward and reverse
blocking voltage MCR100-6/F
MCR100-8/F
V
DRM
AND
V
RRM
I
DRM
= 10 μA
400
600
V
Peak forward or reverse blocking
current
I
DRM
I
RRM
V
AK
= Rated
V
DRM
or V
RRM
10 µA
Holding current
I
H
I
HL
=20mA ,V
AK
=7V 5 mA
Aµ 25 52A
Aµ 03 511A
Aµ 100 20 A
Gate trigger current
I
GT
B
V
AK
=7V
80 200 µA
* Forward current applied for 1 ms maximum duration，duty cycle≤1%。
1. CATHODE
2. GATE
3. ANODE
Gate
Cathode
Symbol
â—‹
â–¼
Anode
1. CATHODE
2. ANODE
3. GATE
TO-92
DIM MILLIMETERS
A
B
C
D
F
G
H
J
L
4.70 MAX
4.80 MAX
3.70 MAX
1.00
1.27
0.85
0.45
14.00 0.50
2.30
D
1 2
3
B
AJ
G
H
F
F
L
E
C
E
C
M
0.51 MAXM
_
0.55 MAX
DIM
A
B
D
E
G
H
K
4.70 MAX
2.50 0.20
1.70 MAX
0.45 0.15/-0.10
4.25 MAX
1.50 0.10
0.40 TYP
1.7 MAX
0.7 MIN
0.5 0.15/-0.10
SOT-89
C
J
G
D
A
C
K
J
F
MILLIMETERS
H
B
E
F
1 2 3
F
D
_
_
MCR100-6/F , -8/F
20011 12. 06 2/2Revision No : 0
Typical Characteristics