MAXIMUM RATINGS

VlobmySgnitaR alue Unit

VegatloV rettimE–rotcelloC

CEO

– 40 Vdc

VegatloV esaB–rotcelloC

CBO

– 40 Vdc

VegatloV esaB–rettimE

EBO

– 5.0 Vdc

Collector Current — Continuous I

C

– 200 mAdc

THERMAL CHARACTERISTICS

lobmyScitsiretcarahC Max Unit

Total Device Dissipation FR– 5 Board(1) P

D

200 mW

T

A

=25 °C

1.6C°52 evoba etareD mW/°C

θJA

600 °C/W

PnoitapissiD eciveD latoT

D

300 mW

Alumina Substrate, (2) T

A

= 25°C

4.2C°52 evoba etareD mW/°C

Thermal Resistance Junction to Ambient R

θJA

400 °C/W

Junction and Storage Temperature T

J

, T

stg

–55 to +150

°C

DEVICE MARKING

2N3906ET1G = 2A

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise noted)

tinU xaM niMlobmyS citsiretcarahC

OFF CHARACTERISTICS

V)3( egatloV nwodkaerB rettimE–rotcelloC

(BR)CEO

Vdc

(I

C

= –1.0 mAdc, I

B

—04 – )0 =

VegatloV nwodkaerB esaB–rotcelloC

(BR)CBO

Vdc

(I

C

= –10 µAdc, I

E

—04 –)0 =

VegatloV nwodkaerB esaB–rettimE

(BR)EBO

Vdc

(I

E

= –10 µAdc, I

C

—0.5 –)0 =

ItnerruC ffotuC esaB

BL

nAdc

(V

CE

= –30 Vdc, V

EB

05 –—)cdV 0.3– =

ItnerruC ffotuC rotcelloC

CEX

nAdc

(V

CE

= –30 Vdc, V

EB

05 –—)cdV 0.3– =

1. FR–4 Minimum Pad

2. FR-4 1.0 x 1.0 inch Pad

General Purpose Transistors

PNP Silicon

2

EMITTER

3

COLLECTOR

1

BASE

3. Pulse Width

<

300 µs; Duty Cycle

<

2.0%.

•

Device Marking

Shipping

2N3906E 2A 3000/Tape & Reel

ORDERING INFORMATION

compliance with RoHS requirements.

We declare that the material of product

SC –89

1

3

2

SEMICONDUCTOR

TECHNICAL DATA

2N3906E

2009. 11. 09 1/6Revision No : 0

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise noted) (Continued)

tinU xaMniMlobmyS citsiretcarahC

ON CHARACTERISTICS (2)

hniaG tnerruC CD

FE

––

(I

C

= –0.1 mAdc, V

CE

––06)cdV 0.1– =

(I

C

= –1.0 mAdc, V

CE

––08)cdV 0.1– =

(I

C

= –10 mAdc, V

CE

003001)cdV 0.1– =

(I

C

= –50 mAdc, V

CE

––06)cdV 0.1– =

(I

C

= –100 mAdc, V

CE

––03)cdV 0.1– =

VegatloV noitarutaS rettimE–rotcelloC

CE(sat)

Vdc

(I

C

= –10 mAdc, I

B

52.0 –––)cdAm 0.1– =

(I

C

= –50 mAdc, I

B

4.0 –––)cdAm 0.5– =

VegatloV noitarutaS rettimE–esaB

BE(sat)

Vdc

(I

C

= –10 mAdc, I

B

58.0 –56.0 –)cdAm 0.1– =

(I

C

= –50 mAdc, I

B

59.0 –––)cdAm 0.5– =

SMALL–SIGNAL CHARACTERISTICS

ftcudorP htdiwdnaB — niaG–tnerruC

T

MHz

(I

C

= –10 mAdc, V

CE

––052)zHM 001 = f ,cdV 02– =

CecnaticapaC tuptuO

obo

pF

(V

CB

= –5.0 Vdc, I

E

5.4––)zHM 0.1 = f ,0 =

CecnaticapaC tupnI

ibo

pF

(V

EB

= –0.5 Vdc, I

C

01––)zHM 0.1 = f ,0 =

hecnadepmI tupnI

ie

kΩ

(V

CE

= –10 Vdc, I

C

210.2)zHk 0.1 = f ,cdAm 0.1– =

hoitaR kcabdeeF egatloV

re

X 10

–4

(V

CE

= –10 Vdc, I

C

011.0)zHk 0.1 = f ,cdAm 0.1– =

hniaG tnerruC langiS–llamS

fe

—

(V

CE

= –10 Vdc, I

C

004001)zHk 0.1 = f ,cdAm 0.1– =

h *ecnattimdA tuptuO

oe

µmhos

(V

CE

= –10 Vdc, I

C

060.3)zHk 0.1 = f ,cdAm 0.1– =

BdFNerugiF esioN

(V

CE

= –5.0Vdc, I

C

= –100 µAdc, R

S

=1.0 kΩ, f =1.0kHz)

–– 4.0

SWITCHING CHARACTERISTICS

Delay Time (V

CC

= – 3.0 Vdc, V

BE

= 0.5 Vdc, t

d

— 35

Rise Time I

C

= –10 mAdc, I

B1

= –1.0 mAdc) t

d

— 35 ns

Storage Time (V

CC

= –3.0 Vdc, I

C

= –10 mAdc, t

s

— 225 ns

Fall Time I

B1

= I

B2

= –1.0 mAdc) t

f

— 75

3. Pulse Test: Pulse Width

<

300 µs; Duty Cycle

<

2.0%.

2009.101. 09 2/6Revision No : 0

2N3906E