FEATURE
PNP silicon epitaxial planar transistor for switching and
Amplifier applications
As complementary type, the NPN transistor 2N3904 is
Recommended
MAXIMUM RATINGS (T
A
=25 unless otherwise noted)
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage -40 V
V
CEO
Collector-Emitter Voltage -40 V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current -Continuous -0.2 A
P
C
Collector Power Dissipation 0.625 W
T
J
Junction Temperature 150
℃
T
stg
Storage Temperature -55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
V
(BR)CBO
I
C
= -10μA, I
E
=0 -40 V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
=-1mA , I
B
=0 -40 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
= -10μA, I
C
=0 -5 V
Collector cut-off current
I
CBO
V
CB
= -40 V,I
E
=0 -0.1 μA
Collector cut-off current
I
CEX
V
CE
= -30 V,V
BE(off)
=-3V -50 nA
Emitter cut-off current
I
EBO
V
EB
= -5 V , I
C
=0 -0.1 μA
h
FE1
V
CE
=-1 V, I
C
= -10mA 100 400
h
FE2
V
CE
=-1 V, I
C
= -50mA 60
DC current gain
h
FE3
V
CE
=-1 V, I
C
= -100mA 30
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -50mA, I
B
= -5mA -0.4 V
Base-emitter saturation voltage
V
BE(sat)
I
C
= -50mA, I
B
= -5mA -0.95 V
Transition frequency
f
T
V
CE
=-20V, I
C
= -10mA
f = 100MHz
250 MHz
Delay Time
sn 53 dt
Rise Time
tr
V
CC
=-3V,V
BE
=-0.5V,
I
C
=-10mA,I
B1
=-1mA
35 ns
Storage Time
sn 522 st
Fall Time
tf
V
CC
=-3V,Ic=-10mA
I
B1
=I
B2
=-1mA
75 ns
CLASSIFICATION OF h
FE1
Rank
G Y O
Range
004-003 003-002 002-001
1 2 3
TO-92
1.EMITTER
2.BASE
3. COLLECTOR
2009. 11. 18 1/2
Revision No : 0
SEMICONDUCTOR
TECHNICAL DATA
2N3906
Typical Characteristics
2009. 11. 18 2/2
Revision No : 0
2N3906