2
EMITTER
3
COLLECTOR
1
BASE
SOT–23
MAXIMUM RATINGS
Rating Unit
Collector–Emitter Voltage 40 Vdc
Collector–Base Voltage 60 Vdc
Emitter–Base Voltage 6.0 Vdc
Collector Current — Continuous 200 mAdc
THERMAL CHARACTERISTICS
SymbolCharacteristic Unit
Total Device Dissipation FR– 5 Board, (1) 225
T
A
= 25 C
1.8Derate above 25 C mW/ C
Thermal Resistance, Junction to Ambient 556
Total Device Dissipation
P
D
300
Alumina Substrate, (2) T
A
= 25 C
4.2Derate above 25 C mW/ C
Thermal Resistance, Junction to Ambient 417
Junction and Storage Temperature –55 to +150
ELECTRICAL CHARACTERISTICS
(T
A
= 25 C unless otherwise noted.)
Min
OFF CHARACTERISTICS
Collector���Emitter Breakdown Voltage(3)
(I
C
= 1.0 mAdc)
Collector–Base Breakdown Voltage
(I
C
= 10 µAdc)
Emitter–Base Breakdow
n Voltage
(I
E
= 10 µAdc)
I
BL
Base Cutoff Current
( V
CE
= 30 Vdc, V
EB
= 3.0 Vdc, )
I
CEX
Collector Cutoff Current
( V
CE
= 30Vdc, V
BE
= 3.0Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width
<
300 µs, Duty Cycle
<
2.0%.
•
Device Shipping
2N3904S 3000/Tape & Reel
General Purpose Transistor
ORDERING INFORMATION
compliance with RoHS requirements.
We declare that the material of product
2007. 12. 18 1/8
SEMICONDUCTOR
TECHNICAL DATA
2N3904S
Revision No : 0
1
3
2
1AM
Marking
Symbol Value
V
CEO
V
CBO
V
EBO
I
C
Max
D
P
θJA
R
θJA
R
, T
stg
J
T
mW
C/W
mW
C/W
C
Symbol
Characteristic
UnitMax
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
40
60
6.0
-
-
-
-
-
50
50
Vdc
Vdc
Vdc
nAdc
nAdc
ELECTRICAL CHARACTERISTICS ( T
A
25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
ON CHARACTERISTICS (3)
DC Current Gain
h
FE
40
70
100
60
30
–
–
300
–
–
–
Collector–Emitter Saturation Voltage
V
CE(sat)
–
–
0.2
0.3
Vdc
Base–Emitter Saturation Voltage
V
BE(sat)
0.65
–
0.85
0.95
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
f
T
300 – MHz
Output Capacitance
C
obo
– 4.0 pF
Input Capacitance
C
ibo
– 8.0 pF
3. Pulse Test: Pulse Width ≤ 300 µs; Duty Cycle ≤ 2.0%.
2007. 12. 18 2/8
2N3904S
Revision No : 0
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Input Impedance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
ie
1.0 10 kΩ
Voltage Feedback Ratio
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
re
0.5 8.0
X 10
-4
Small–Signal Current Gain
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
fe
100 400 –
Output Admittance
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc, f = 1.0 kHz)
h
oe
1.0 40 μmhos
Noise Figure
(V
CE
= 5.0Vdc, I
C
= 100 μAdc, RS = 1.0 k ��, f = 1.0 kHz)
NF – 5.0 dB
SWITCHING CHARACTERISTICS
Delay Time (V
CC
= 3.0 Vdc, V
BE
= –0.5 Vdc t
d
– 35
Rise Time I
C
= 10 mAdc, I
B1
= 1.0 mAdc) t
r
– 35
ns
Storage Time (V
CC
= 3.0 Vdc, I
C
= 10 mAdc t
s
– 200
Fall Time I
B1
= I
B2
= 1.0 mAdc) t
f
– 50
ns