2016. 12. 18 1/5
SEMICONDUCTOR
TECHNICAL DATA
2N3904LP
Revision No : 0
1. FEATURES
● We declare that the material of product compliance with
RoHS requirements and Halogen Free.
2. DEVICE MARKING AND ORDERING INFORMATION
3. MAXIMUM RATINGS(Ta = 25ºC)
4. THERMAL CHARACTERISTICS
Total Device Dissipation,
FR−5 Board (Note 1) @ TA = 25ºC mW
Derate above 25ºC mW/ºC
Thermal Resistance, ºC/W
Junction–to–Ambient(Note 1)
Junction and Storage temperature ºC
1. FR–5 = 1.0×0.75×0.062 in.
Parameter Symbol Limits
General Purpose Transistors NPN Silicon
Device Marking Shipping
2N3904LP 1A 10000/Tape&Reel
Unit
Collector–Emitter Voltage VCEO 40 Vdc
Collector–Base Voltage VCBO 60 Vdc
250
Pa
rameter Symbol Limits Unit
2
500
Emitter–Base Voltage VEBO 6 Vdc
Collector Current — Continuous IC 200 mAdc
PD
RΘJA
−55∼+150TJ,Tstg
SOT-883
1 BASE
2 EMITTER
3 COLLECTOR
2016. 12. 18 2/5
2N3904LP
Revision No : 0
5. ELECTRICAL CHARACTERISTICS (Ta= 25ºC)
OFF CHARACTERISTICS
Characteristic
Collector–Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
Collector–Base Breakdown Voltage
(IC = 10 μAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 10 μAdc, IC = 0)
Collector Cutoff Current
( VCE = 30 Vdc, VEB = 3.0Vdc)
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0Vdc)
ON CHARACTERISTICS (Note 2.)
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector–Emitter S
atura
tion Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10mAdc, VCE= 20Vdc, f = 100MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
2.Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%.
pF
ns
(VCC = 3.0 Vdc,VBE=-0.5Vdc,
IC = 1
0mAd
c, IB1 = 1.0 mAdc)
(VCC = 3.0 Vdc, IC = 10
mAdc,IB1 = IB2 = 1.0 mAdc)
- - 35td
tr - - 35
ts - - 200
tf - - 50
V
V
nA
nA
V
V
MHz
30 - -
- - 0.2
- - 0.3
0.65 - 0.85
- - 0.95
fT
300 - -
VBE(sat)
Cobo
Cibo
- - 4
- - 8
pF
Unit
VBR(CEO)
V
40 - -
Symbol Min.
VBR(CBO)
60 - -
VBR(EBO)
6 - -
Typ. Max.
ICEX
- - 50
VCE(sat)
IBL
- - 50
HFE
40 -
70 - -
100 - 300
60 - -
-