General Purpose Transistors
NPN Silicon
SEMICONDUCTOR
TECHNICAL DATA
2N3904E
2021. 07. 14 1/3Revision No : 1
Feature
Simplifies Circuit Design.
compliance with
We declare that the material of product
RoHS requirements.
2
EMITTER
3
COLLECTOR
1
BASE
1
2
3
1.Base
2.Emitter
3.Collector
SOT-523(SC-75)
Marking
Marking
Absolute Maximum Ratings
(Ta = 25℃)
Parameter Symbol Rating Unit
Collector - Base Voltage V
CBO 60
Collector - Emitter Voltage V
CEO 40
Emitter - Base Voltage VEBO 6
Collector Current - Continuous I
C 200 mA
Collector Power Dissipation P
C 150 mW
Thermal Resistance, Junction to Ambient R
θJA 833 °C/W
Junction Temperature T
J 150
Storage Temperature Range T
stg
-55 to 150
V
℃
Electrical Characteristics (
Ta = 25℃)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector- base breakdown voltage V
CBO
Ic= 100 μA， I
E
= 0
60
Collector- emitter breakdown voltage V
CEO
Ic= 1 mA， I
B
= 0
40
Emitter - base breakdown voltage V
EBO
I
E
= 100μA， I
C
= 0
6
Collector-base cut-off current I
CBO
V
CB
= 60 V , I
E
= 0 100
Collector cut-off current I
CEX
V
CE
= 30 V , V
EB(off)
=3V 50
Emitter cut-off current I
EBO VEB= 5V , IC=0 100
I
C=10 mA, IB=1mA 0.2
IC= 50 mA, IB= 5mA 0.3
I
C
=10 mA, I
B
=1mA 0.65 0.85
I
C
= 50 mA, I
B
= 5mA 0.95
h
FE(1) VCE= 10V, IC= 0.1mA 40
h
FE(2) VCE= 10V, IC= 1mA 70
h
FE(3)
V
CE
= 10V, I
C
= 10mA 100 300
h
FE(4) VCE= 10V, IC= 50mA 60
Delay time t
d 35
Rise time t
r 35
Storage time ts 200
Fall time t
f 50
Collector output capacitance Cob VCB= 5V, IE= 0,f=1MHz 4
Base input capacitance C
ib VEB=0.5V, IC=0, f=1MHz 8
Transition frequency f
T VCE= 20V, IC= 10mA,f=100MHz 300 MHz
V
CC
=3V, V
BE(off)
=-0.5V
I
C
=10mA, I
B1
=1mA
nS
V
CC
=3V, I
C
=10mA, I
B1
=I
B2
=1mA
pF
V
nA
Collector-emitter saturation voltage V
CE(sat)
VBE(sat) Base - emitter saturation voltage
V
DC current gain
AM or
1N
2021. 07. 14 2/3Revision No : 1
2N3904E
Electrical Characteristics Curves
0.1 1 10 100
0
50
100
150
200
250
300
0 25 50 75 100 125 150
0
25
50
75
100
125
150
175
200
0.1 1 10 100
0.2
0.4
0.6
0.8
1.0
11 10 00
0
100
200
300
400
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
2
4
6
8
10
12
14
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.1
1
10
100
200
V
CE
= 1V
T
a
=100
o
C
T
a
=25
o
C
COLLECTOR CURRENT I
C
(mA)
DC CURRENT GA N h
FE
I
C
h
FE
——
COLLECTOR POWER DISS PATION
P
c
(mW)
AMBIENT TEMPERATURE T
a
( )℃
P
c
—— T
a
200
COLLECTOR CURRENT I
C
(mA)
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(V)
T
a
=25℃
T
a
=100℃
β=10
I
C
V
BEsat
——
200
T
a
=25℃
T
a
=100℃
β=10
V
CEsat
—— I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(mV)
COLLECTOR CURRENT I
C
(mA)
COMMON
EMITTER
T
a
=25℃
70uA
63uA
56uA
49uA
42uA
35uA
28uA
21uA
14uA
I
B
=7uA
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(mA)
Static Characteristic
200
V
CE
=1V
T
a
=25℃
T
a
=100
o
C
BASE-EMITTER VOLTAGE V
BE
(V)
COLLECTOR CURRENT I
C
(mA)
I
C
—— V
BE