FEATURE
NPN silicon epitaxial planar transistor for switching and
Amplifier applications
As complementary type, the PNP transistor 2N3906 is
Recommended
MAXIMUM RATINGS (T
A
=25℃ unless otherwise noted)
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 60 V
V
CEO
Collector-Emitter Voltage 40 V
V
EBO
Emitter-Base Voltage 6 V
I
C
Collector Current -Continuous 0.2 A
P
C
Collector Power Dissipation 0.625 W
T
J
Junction Temperature 150
℃
T
stg
Storage Temperature -55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
V
(BR)CBO
I
C
=10μA, I
E
=0 60 V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= 1mA , I
B
=0 40 V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
= 10μA, I
C
=0 6 V
Collector cut-off current
I
CBO
V
CB
=60V, I
E
1.0 0= μA
Collector cut-off current
I
CEO
V
CE
= 40V, I
B
=0 0.1 μA
Emitter cut-off current
I
EBO
V
EB
= 5V, I
C
1.0 0= μA
h
FE1
V
CE
=1V, I
C
=10mA 100 400
h
FE2
V
CE
=1V, I
C
=50mA 60
DC current gain
h
FE3
V
CE
=1V, I
C
=100mA 30
Collector-emitter saturation voltage
V
CE(sat)
I
C
=50mA, I
B
=5mA 0.3 V
Base-emitter saturation voltage
V
BE(sat)
I
C
=50mA, I
B
=5mA 0.95 V
Transition frequency
f
T
V
CE
=20V,I
C
=10mA,f=100MHz 300 MH
Z
Delay Time
t
d
sn 53
Rise Time
t
r
V
CC
=3V,V
BE
=0.5V,
I
C
=10mA,I
B1
=1mA
35 ns
Storage Time
t
s
sn 002
Fall Time
t
f
V
CC
=3V, I
C
=10mA
I
B1
=I
B2
=1mA
50 ns
CLASSIFICATION OF h
FE1
Rank
G Y O
Range
004-003 003-002 002-001
1 2 3
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
SEMICONDUCTOR
TECHNICAL DATA
2N3904
2009. 11. 18 1/2
Revision No : 0
Typical Characteristics
2N3904
2009. 11. 18 2/2
Revision No : 0