General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC-323/SC−70 package which
is designed for low power surface mount applications.
Features
•
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Symbol Max Unit
Collector−Emitter Voltage V
CEO
40 Vdc
Collector−Base Voltage V
CBO
75 Vdc
Emitter−Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation (Note 1)
T
A
= 25°C
P
D
150 mW
Thermal Resistance,
Junction−to−Ambient
R
JA
833 °C/W
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
Device Maring Shipping
†
ORDERING INFORMATION
COLLECTOR
3
1
BASE
2
EMITTER
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
40 − Vdc
Collector−Base Breakdown Voltage
(I
C
= 10 Adc, I
E
= 0)
V
(BR)CBO
75 − Vdc
Emitter−Base Breakdown Voltage
(I
E
= 10 Adc, I
C
= 0)
V
(BR)EBO
6.0 − Vdc
Base Cutoff Current
(V
CE
= 60 Vdc, V
EB
= 3.0 Vdc)
I
BL
− 20 nAdc
Collector Cutoff Current
(V
CE
= 60 Vdc, V
EB
= 3.0 Vdc)
I
CEX
− 10 nAdc
2N2222AU P1
3000 / Tape & Reel
compliance with RoHS requirements.
We declare that the material of product
SEMICONDUCTOR
TECHNICAL DATA
2N2222AU
2008. 02. 18 1/3Revision No : 1
1
3
2
SC-70 / SOT– 323
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 10 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
= 150 mAdc, V
CE
= 10 Vdc)
(I
C
= 500 mAdc, V
CE
= 10 Vdc)
H
FE
35
50
75
100
40
−
−
−
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
CE(sat)
−
−
0.3
1.0
Vdc
Base−Emitter Saturation Voltage
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
V
BE(sat)
0.6
−
1.2
2.0
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 20 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
f
T
300 − MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
− 8.0 pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
− 30 pF
Input Impedance
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
h
ie
0.25 1.25
k
Voltage Feedback Ratio
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
h
re
− 4.0 X 10
−4
Small−Signal Current Gain
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
h
fe
75 375 −
Output Admittance
(V
CE
= 10 Vdc, I
C
= 10 mAdc, f = 1.0 kHz)
h
oe
25 200
mhos
Noise Figure
(V
CE
= 10 Vdc, I
C
= 100 Adc, R
S
= 1.0 k ohms, f = 1.0 kHz)
NF − 4.0 dB
SWITCHING CHARACTERISTICS
Delay Time
(V
CC
= 30 Vdc, V
BE
= −0.5 Vdc,
I
C
= 150 mAdc, I
B1
= 15 mAdc)
t
d
− 10
ns
Rise Time t
r
− 25
Storage Time
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B1
= I
B2
= 15 mAdc)
t
s
− 225
ns
Fall Time t
f
− 60
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.
2N2222AU
2008. 02. 18 1/3Revision No : 1