2017-8-25
62.5
2
The PT4410 uses advanced trench technology and
N-Channel
PT4410
Enhancement Mode Power MOSFET
Description
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
General Features
●V
DS
=30V,I
D
=10A
R
DS(ON)
< 13.5mΩ @ V
GS
=10V
R
DS(ON)
< 20mΩ @ V
GS
=4.5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
Application
● Power switching application
● Hard switched and high frequency circuits
● Uninterruptible power supply
Schematic diagram
Marking and pin Assignment
SOP-8 top view
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
30 V
Gate-Source Voltage
V
GS
±20 V
Drain Current-Continuous
I
D
10 A
Pulsed Drain Current
I
DM
50 A
Maximum Power Dissipation
P
D
W
Operating Junction and Storage Temperature Range
T
J
,T
STG
-55 To 150 ℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
R
θJA
/W℃
1 -
-
-
126
170
2097
7
39
9
14
23
7
5
=10A
=10A,
=10A
10 =15V,I =10A
20
13.5
2.5
=5A
=10A
Electrical Characteristics (T
A
=25 unless otherwise noted)℃
Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V I
D
=250μA 30 - V
Zero Gate Voltage Drain Current I
DSS
V
DS
=30V,V
GS
=0V - - 1 μA
Gate-Body Leakage Current I
GSS
V
GS
=±20V,V
DS
=0V - - ±100 nA
On Characteristics
(Note 3)
Gate Threshold Voltage V
GS(th)
V
DS
=V
GS
,I
D
=250μA 1 V
V
GS
=10V, I
D
-
Drain-Source On-State Resistance R
DS(ON)
V
GS
=4.5V, I
D
-
mΩ
Forward Transconductance g
FS
V
DS D
- S
Dynamic Characteristics
(Note4)
Input Capacitance C
lss
- - PF
Output Capacitance C
oss
- - PF
Reverse Transfer Capacitance C
rss
V
DS
=15V,V
GS
=0V,
F=1.0MHz
- - PF
Switching Characteristics
(Note 4)
Turn-on Delay Time t
d(on)
- - nS
Turn-on Rise Time t
r
- - nS
Turn-Off Delay Time t
d(off)
- - nS
Turn-Off Fall Time t
f
V
DD
=10V,I
D
V
GS
=10V,R
GEN
=2.7Ω
- - nS
Total Gate Charge Q
g
- - nC
Gate-Source Charge Q
gs
- - nC
Gate-Drain Charge Q
gd
V
DS
=10V,I
D
V
GS
=10V
- - nC
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
V
SD
V
GS
=0V,I
S
- - 1.2 V
Diode Forward Current
(Note 2)
I
S
- - 18 A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
PT4410
-
-
-
- -
2 -
-
2017-8-25