MMDT5401
DUAL
TRANSISTOR (PNP+PNP)
FEATURES
z
Epit
axial Planar Die Construction
z
Complement
ary NPN Type Available(MMDT 5551)
z
Ideal for Med
ium Power Amplification and Switching
MAXIMUM RATINGS (T
a
=25℃ unless other
wise noted)
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Co
llector-base breakdown voltage
V
(B
R)CBO
I
C
=
-100μA , I
E
=
0 -160 V
Co
llector-emitter breakdown voltage
V
(B
R)CEO
I
C
=
-1mA , I
B
=
0 -150 V
Emitter-b
ase breakdown voltage
V
(
BR)EBO
I
E
=-1
0μA, I
C
=0 -5 V
Co
llector cut-off current
I
CB
O
V
CB
=
-120 V , I
E
=0 -0
.1 μA
Emitter cut-off current
I
EBO
V
EB
=-3V
, I
C
=0 -0
.1 μA
h
FE(1)
V
CE
=-5
V, I
C
=
-1mA 50
h
FE(2)
V
CE
=-5
V, I
C
=
-10mA 100
300
DC cu
rrent gain
h
FE(3)
V
CE
=-5
V, I
C
=
-50mA 50
V
CE
(sat)1
I
C
=
-10 mA, I
B
=-
1mA -0.2 V
Co
llector-emitter saturation voltage
V
CE
(sat)2
I
C
=
-50 mA, I
B
=-
5mA -0.5 V
V
BE(
sat)1
I
C
=
-10 mA, I
B
=-1mA -1 V
Bas
e-emitter saturation voltage
V
BE(
sat)2
I
C
=
-50 mA, I
B
=-5mA -1 V
T
ransition frequency
f
T
V
CE
=
-10V, I
C
=
-10mA,f = 100MHz 100 MHz
Ou
tput Capacitance
C
ob
V
CB
=
-10V, I
E
= 0,f=
1MHz 6 pF
Nois
e Figure
NF V
CE
= -5.0V
, I
C
= -200μA,
R
S
= 1
0Ω,f = 1.0kHz
8.0 dB
Symbol Paramete
r Value Units
V
CBO
Coll
ector- Base Voltage -160 V
V
CE
O
Coll
ector-Emitter Voltage -150 V
V
EB
O
Emitter-Base V
oltage -5 V
I
C
Coll
ector Current -Continuous -0.2 A
P
C
Coll
ector Power Dissipation
0.2
W
Operation Junction and
Storage Temperature Range
℃
T
J
,T
stg
-55~+150
SOT
-363
１
Ｄａｔｅ：２０２１／１０
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semiconductor
JinYu
CLASSIFICATION OF h
FE
RANK L H
RANGE 100–200 200–300
MARKING
K4M
：
K4N
：
-1 -10 -1
00
-200
-400
-600
-800
-1000
-1 -10
1
10
100
1000
-200 -400 -
600 -800 -1000 -1200
-0.1
-1
-10
-100
-1 -10 -1
00
-0.01
-0.1
-1
-10
-100
0 25 50 75 100 125
150
0
50
100
150
200
250
-0.1 -1 -10
1
10
100
-1 -10 -1
00
0
50
100
150
200
250
300
350
400
-0
-1 -2 -3 -4 -5 -6 -7 -8
-0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
V
BE
-200
β=10
I
C
V
B
Esat
—
—
T
a
=100
℃
T
a
=25
℃
BASE-
EMIT
T
ER SATURATION
VOLTAGE V
BEsat
(mV)
COLLECTOR CURRENT I
C
(mA)
I
C
f
T
——
COM
MON EMITTER
V
CE
= -
10V
T
a
=25
℃
TRANSI
TION FREQUENCY f
T
(MHz)
COLLECTOR CURRENT I
C
(mA)
I
C
—
—
COM
MON EMITTER
V
CE
=-5V
T
a
=100
℃
T
a
=25
℃
-
200
COLLECTOR CURRENT I
C
(mA)
BASE-EMM
ITER VOLTAGE V
BE
(mV)
-
200
β=10
T
a
=100
℃
T
a
=25
℃
I
C
V
C
Esat
——
COLLECTOR-EMITTER SATURATION
VOLTAG
E V
CEsa
t
(V)
COLLECTOR CURRENT I
C
(mA)
P
C
—— T
a
COLLECTO
R POWER DISSIPATION
P
C
(mW)
AMBIENT T
EMPERATURE T
a
( )
℃
-70
f=1MHz
I
E
=0/I
C
=0
T
a
=25
℃
-35
V
CB
/ V
EB
C
ob
/ C
ib
——
C
ob
C
ib
CAPACITANCE C (p
F)
REVERSE VOLTAG
E V (V)
-0
.4
-600
COMMON EMITTER
V
CE
=-5V
I
C
h
FE
—
—
T
a
=25
℃
T
a
=100
℃
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I
C
(m
A)
S
tatic Characteristic
COM
MON EMITTER
T
a
=25
℃
COLLECTOR CURRENT I
C
(mA)
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
I
B
=-0.01mA
-0
.1mA
-
0.09mA
-
0.08mA
-
0.07mA
-
0.06mA
-
0.05mA
-
0.04mA
-
0.03mA
-
0.02mA
Typical
Characteristics
MMDT5401
２
Ｄａｔｅ：２０２１／１０
www.htsemi.com
semiconductor
JinYu