MMDT3904
FEA
TURES
z
Epit
axial planar die construction
z
Ideal for low powe
r amplification and switching
MARKING :K6N
MAXIMUM RATINGS (T
a
=25℃ unless other
wise noted)
Symbol Paramete
r Value Units
V
CBO
Coll
ector-Base Voltage 60 V
V
CE
O
Coll
ector-Emitter Voltage 40 V
V
EB
O
Emitter-Base V
oltage 5 V
I
C
Coll
ector Current -Continuous 0.2 A
P
C
Coll
ector Power Dissipation 0.2 W
Operation Junction and
Storage Temperature Range
T
J
,T
stg
-55~+150
ELECTRICAL
CHARA
CTERISTICS (T
a=25℃ unless other
wise specified)
P
arameter
Symbol Test conditions Min Typ Max Unit
Co
llector-base breakdown voltage
V
(B
R)CBO
I
C
=1
0μA,I
E
=
0 60 V
Co
llector-emitter breakdown voltage
V
(B
R)CEO
I
C
=1
mA,I
B
=
0 40 V
Emitter-b
ase breakdown voltage
V
(
BR)EBO
I
E
=1
0μA,I
C
=0 5
V
Co
llector cut-off current
I
CB
O
V
CB
=
30V,I
E
=
0 0.1 μA
Emitter cut-off current
I
EBO
V
EB
=5
V,I
C
=
0 0.1 μA
h
FE(1)
V
CE
=1
V,I
C
=
0.1mA 40
h
FE(2)
V
CE
=1
V,I
C
=
1mA 70
h
FE(3)
V
CE
=1
V,I
C
=
10mA 100 300
h
FE(4)
V
CE
=1
V
,
I
C
=
50mA 60
DC cu
rr
en
t g
ain
h
FE(5)
V
CE
=1
V
,
I
C
=
100
mA 30
V
CE
(sat)1
I
C
=
10mA,I
B
=
1mA 0.2 V
Co
llecto
r
-emitter satu
r
ation voltage
V
CE
(sat)2
I
C
=
50mA,I
B
=
5mA 0.3 V
V
BE(
sat)1
I
C
=
10mA,I
B
=
1mA 0.65 0.85 V
Bas
e-emitter saturation voltage
V
BE(
sat)2
I
C
=
50mA,I
B
=
5
mA 0.95
V
T
r
a
n
s
ition frequency
f
T
V
CE
=
20V,I
C
=
10mA,f=100MHz 300 MHz
Co
llecto
r
o
u
tput capacitance
C
ob
V
CB
=5
V,I
E
=
0,f=1MHz 4 pF
No
ise figure
NF V
CE
=5
V,I
c
=0.1mA,f=1kHz,R
S
=1
KΩ 5 dB
Dela
y time
t
d
35
nS
Rise time
t
r
V
CC
=3
V, V
BE(
off)
=
-0.5V
I
C
=10mA , I
B1
=-I
B2
= 1mA
35 nS
S
torage time
t
s
200 nS
Fall time
t
f
V
CC
=3V, I
C
=10mA
I
B1
=-
I
B2
=1
mA
50 nS
℃
Co
llector cut-off current
I
CEX
V
CE
=
30V,V
BE(off)
=3V 0.05 μA
DUAL TRANSISTOR (NPN+NPN)
SOT
-363
１
Ｄａｔｅ：２０２１／１０
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semiconductor
JinYu
0.1 1 10 100
0
50
100
150
200
250
300
0 25 50 75 100 125
150
0
100
200
300
0.1 1 10 100
0.2
0.4
0.6
0.8
1.0
110100
0
100
200
300
400
0.0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
2
4
6
8
10
12
14
0.3 0.4
0.5 0.6 0.7 0.8 0.9 1.0
0.1
1
10
100
200
V
CE
= 1V
T
a
=100
o
C
T
a
=25
o
C
COLLECTOR CURRENT I
C
(mA)
DC CURRENT GAIN h
FE
I
C
h
FE
——
COLLECTO
R POWER DISSIPATION
P
c
(mW)
AMBIENT T
EMPERATURE T
a
( )
℃
P
c
—— T
a
200
COLLECTOR CURRENT I
C
(mA)
BASE-
EMITTER SATURATION
VOLTAGE V
BEsat
(V)
T
a
=25
℃
T
a
=100
℃
β=10
I
C
V
B
Esat
——
200
T
a
=25
℃
T
a
=100
℃
β=10
V
C
Esat
—
— I
C
COLLECTOR-EMITTER SATURATION
VO
LTAG
E V
CEsa
t
(mV)
COLLECTOR CURRENT I
C
(mA)
COMMON
EMITTER
T
a
=25
℃
70uA
63uA
56uA
49uA
42uA
35uA
28uA
21uA
14uA
I
B
=7uA
COLLECTOR-EM
ITTER VOLTAGE V
CE
(V)
COLLECTOR CURRENT I
C
(mA)
Stat
ic Characteristic
200
V
CE
=1V
T
a
=25
℃
T
a
=100
o
C
BASE-EMIT
TER VOLTAGE V
BE
(V)
COLLECTOR CURRENT I
C
(mA)
I
C
—— V
BE
T
y
pical Characteristics
MMDT3904
２
Ｄａｔｅ：２０２１／１０
www.htsemi.com
semiconductor
JinYu