MBR2060DCT
MBR2060YCT
MBR2060FCT
MBR2060CT
224
50
MBR2060
1 -
2019-10-28
-
SCHOTTKY
BARRIER
DIODE
APPLICATIONS
High frequency switch
power supply
Free
wheeling diodes,
polarity protection
applications
FEATURES
Common cathode
structure
Low power loss, high efficiency
High Operating Junction
Temperature
Guard ring for overvoltage
protectionHigh reliability
RoHS product
ABSOLUTE RATINGS
(Tc=25)
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
60
V
Maximum DC blocking voltage
V
DC
60
V
T
C
=150
(TO-220/263/
TO-252)
T
C
=125
(TO-220F
)
per device
per diode
I
F(AV)
20
10
A
Surge non repetitive forward current
8.3 ms single half-sine-wave (JEDEC Method)
I
FSM
A
Maximum
junction temperature
T
j
1
Storage temperature range
T
STG
-40~+150
TO-220
1 2 3
TO-220F
TO-252
TO-263
1 2 3
1
2
3 1
2
3
Tape Reel
Tube
TO-220
1
Pin Assignment
PackingPackageProduct
ORDER INFORMATION
2 3
TO-220F
TO-263
TO-252
A K A
A K A
A K A
A K A
Tube
Tape Reel
3
2 --
ELECTRICAL
CHARACTERISTICS
THERMAL
CHARACTERISTICS
Parameter
Symbol
Value(min)
Value(max)
Unit
Thermal resistance from
junction to case
TO-220
TO-263
TO-252
TO-220F
Rth(j-c)
/W
Parameter
Tests conditions
Value(min)
Value(typ)
Value(max)
Unit
I
R
Tj =25
V
R
=V
RRM
15
μA
V
F
Tj =25
I
F
=10A
V
0.73
0.80
2.0
2.0
.0
4.0
ELECTRICAL CHARACTERISTICS (curves)
2019-10-28
MBR2060
SCHOTTKY BARRIER DIODE
0.
0
0.
2
0.
4
0.
6
0.
8
10
0
10
1
10
2
10
3
10
4
10
5
I
F
INSTANTANEOUS FORWARD CURRENT (mA)
V
F
INSTANTANEOUS FORWARD VOLTAGE
(V)
Ta = 125
o
C
Ta = 75
o
C
Ta = 25
o
C
I
F
--
V
F
0 20 40 60
10
-1
10
0
10
1
10
2
10
3
10
4
Ta = 125
o
C
Ta = 25
o
C
I
R
--
V
R
I
R
INSTANTANEOUS REVERSE CURRENT (μA)
V
R
INSTANTANEOUS REVERSE VOLTAGE ( V )
Ta = 75
o
C
0 2 4 6 8 10
200
400
600
800
C
TOT
TOTAL CAPACITANCE ( pF )
V
R
REVERSE VOLTAGE ( V )
f
= 1 MHz
Ta
= 25
o
C
C
TO
T
--
V
R