MBR20200DCT
MBR20200YCT
MBR20200FCT
MBR20200CT
TO-220F
185
50
MBR20200
1 -
2019-10-28
-
SCHOTTKY
BARRIER
DIODE
APPLICATIONS
High frequency switch
power supply
Free
wheeling diodes,
polarity protection
applications
FEATURES
Common cathode
structure
Low power loss, high efficiency
High Operating Junction
Temperature
Guard ring for overvoltage
protection，High reliability
RoHS product
ABSOLUTE RATINGS
(Tc=25℃)
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
200
V
Maximum DC blocking voltage
V
DC
200
V
Average forward
current
T
C
=150℃
(TO-220/263/
TO-252)
T
C
=125℃
(TO-220F
)
per device
per diode
I
F(AV)
20
10
A
Surge non repetitive forward current
8.3 ms single half-sine-wave (JEDEC Method)
I
FSM
A
Maximum
junction temperature
T
j
1
℃
Storage temperature range
T
STG
-40~+150
℃
TO-220
1 2 3
TO-252
TO-263
1 2 3
1
2
3 1
2
3
Tape Reel
Tube
TO-220
1
Pin Assignment
PackingPackageProduct
ORDER INFORMATION
2 3
TO-220F
TO-263
TO-252
A K A
A K A
A K A
A K A
Tube
Tape Reel
3
2 --
ELECTRICAL
CHARACTERISTICS
THERMAL
CHARACTERISTICS
Parameter
Symbol
Value(min)
Value(max)
Unit
Thermal resistance from
junction to case
TO-220
TO-263
TO-252
TO-220F
Rth(j-c)
℃/W
Parameter
Tests conditions
Value(min)
Value(typ)
Value(max)
Unit
I
R
Tj =25℃
V
R
=V
RRM
10
μA
V
F
Tj =25℃
I
F
=10A
V
0.88
0.95
2.0
2.0
.0
4.0
ELECTRICAL CHARACTERISTICS (curves)
2019-10-28
MBR20200
SCHOTTKY BARRIER DIODE
0.
0
0.
2
0.
4
0.
6
0.
8
1.
0
10
0
10
1
10
2
10
3
10
4
10
5
I
F
INSTANTANEOUS FORWARD CURRENT (mA)
V
F
INSTANTANEOUS FORWARD VOLTAGE
(V)
Ta = 125
o
C
Ta = 75
o
C
Ta = 25
o
C
I
F
--
V
F
0 20 40 60 80 100 120 140 160 180 200
10
-1
10
0
10
1
10
2
10
3
10
4
Ta = 125
o
C
Ta = 25
o
C
I
R
--
V
R
I
R
INSTANTANEOUS REVERSE CURRENT (μA)
V
R
INSTANTANEOUS REVERSE VOLTAGE ( V )
Ta = 75
o
C
0 2 4 6 8 10
50
100
150
200
250
300
f
= 1 MHz
Ta
= 25
o
C
C
TO
T
--
V
R
V
R
REVERSE VOLTAGE ( V )
C
TOT
TOTAL CAPACITANCE ( pF )